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Extended Quantum Model for Porous Silicon Formation

Published online by Cambridge University Press:  28 February 2011

H. Münder ,
St. Frohnhoff ,
M.G. Berger ,
M. Marso ,
M. Thönissen ,
R. Arens-Fischer  and
H. Lüth
H. Münder
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
St. Frohnhoff
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
M.G. Berger
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
M. Marso
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
M. Thönissen
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
R. Arens-Fischer
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
H. Lüth
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülien, Germany
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Abstract

The formation of porous silicon (PS) by electrochemical dissolution of bulk Si is described by a new model involving quantum mechanical calculations of the tunneling probability of holes through small crystallites (< 60 Å) into the electrolyte. This tunneling probability shows oscillations as a function of crystallite size. The presented model calculations are in agreement to the microstructure of p-PS — deduced from Raman measurements — as a function of etching parameters and substrate doping level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 315
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Uhlir, A., Bell Syst. Tech. J. 35, 333 (1956).Google Scholar
2 Pickering, C., Beale, M., Robbins, D., Pearson, P., and Greef, R., J. Phys. C: Solid State Phys. 17, 5535 (1984).Google Scholar
3 Beale, M., Benjamin, J., Uren, M., Chew, N., and Cullis, A., J. Cryst. Growth 73, 622 (1985).Google Scholar
4 Beale, M., Benjamin, J., Uren, M., Chew, N., and Cullis, A., Appl. Phys. Lett. 46, 86 (1985).Google Scholar
5 Lehmann, V., Cerva, H., and Gösele, U., Mat. Res. Soc. Symp. Proc. 256, 3 (1992).Google Scholar
6 Smith, R., Chuang, S., and Collins, S., J. Electronic Materials 17, 533 (1988).Google Scholar
7 Münder, H., Berger, M., Frohnhoff, S., Thönissen, M., and Lüth, H., J. of Luminescence 57, 5 (1993).Google Scholar
8 Read, A. et al. , Phys. Rev. Lett. 69, 1232 (1992).Google Scholar
9 Sanders, G. and Chang, Y.-C., Phys. Rev. B 45, 856 (1992).Google Scholar
10 Chandra, A. and Eastman, L., J. Appl. Phys. 53, 9165 (1982).Google Scholar
11 Frohnhoff, S. et al. , J. Electrochem. Soc., in press (1994).Google Scholar
12 Frohnhoff, S. et al. , to be published.Google Scholar