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Exploitation of Quantum Photoeffects in Reducing Microscopic Defects and Processing Cycle Time in Advanced Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

V. Vedagarbha ,
R. Singh ,
D. Ratakonda ,
L. Vedula ,
A. Rohatgi  and
S. Narayanan
V. Vedagarbha
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634, singh@ces.clemson.edu
R. Singh
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634, singh@ces.clemson.edu
D. Ratakonda
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634, singh@ces.clemson.edu
L. Vedula
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634, singh@ces.clemson.edu
A. Rohatgi
Affiliation:
Georgia Institute of Technology, School of Electrical Engineering, Atlanta, GA 30332
S. Narayanan
Affiliation:
Solarex, Frederick, MD 21701
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Abstract

Rapid thermal processing is fast emerging as a vital low thermal budget processing technique. Use of photons of wavelengths less than 800 nm in conjunction with infrared and visible photons in RTP resulted in the reduction of microscopic defects and processing time. Screen printed back surface field (BSF) contacts and ohmic contacts which are an integral part of solar cells were processed and Schottky barrier diodes were made. Cycle time was reduced from 172 see's to 108 see's in the case of back surface field contacts and from 162 see's to 122 see's for the ohmic contacts. The Schottky diodes were characterized for electrical data. The structural properties of the metal silicon interface have direct correlation with the electrical properties of the device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 425
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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