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Experimental and Theoretical Investigation of Minimization of Forming-Induced Variability in Resistive Memory Devices

Published online by Cambridge University Press:  10 February 2015

Brian L. Geist ,
Dmitri Strukov  and
Vladimir Kochergin
Brian L. Geist
Affiliation:
MicroXact, Inc., Blacksburg, VA 24060-6376, U.S.A.
Dmitri Strukov
Affiliation:
Electrical and Computer Engineering Department, UC Santa Barbara, Santa Barbara, CA 93106-9560, U.S.A.
Vladimir Kochergin
Affiliation:
MicroXact, Inc., Blacksburg, VA 24060-6376, U.S.A.
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Abstract

Resistive memory materials and devices (often called memristors) are an area of intense research, with metal/metal oxide/metal resistive elements a prominent example of such devices. Electroforming (the formation of a conductive filament in the metal oxide layer) represents one of the often necessary steps of resistive memory device fabrication that results in large and poorly controlled variability in device performance. In this contribution we present a numerical investigation of the electroforming process. In our model, drift and Ficks and Soret diffusion processes are responsible for movement of vacancies in the oxide material. Simulations predict filament formation and qualitatively agreed with a reduction of the forming voltage in structures with a top electrode. The forming and switching results of the study are compared with numerical simulations and show a possible pathway toward more repeatable and controllable resistive memory devices.

Keywords

memoryTioxide
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 53 - 58
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Chua, L.O., “Memristor - the missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, 507–519, 1971.CrossRefGoogle Scholar
Strukov, D.B., Snider, G., Stewart, D.R., and Williams, R.S., “The missing memristor found”, Nature 453, pp. 80–83, 2008.10.1038/nature06932CrossRefGoogle Scholar
Yang, J., Miao, F., Pickett, M., Ohlberg, D., Stewart, D.R., Lau, C., and Williams, R.S., “The mechanism of electroforming of metal oxide memristive switches,” Nanotechnology, vol. 20, no. 21, 2009.Google Scholar
Larentis, S., Nardi, F., Balatti, S., Gilmer, D. C., and Ielmini, D., “Resistive switching by voltage-driven ion migration in bipolar RRAM─ Part II: Modeling”, IEEE Trans. Electron Devices, vol. 59, pp. 2468–2475 2012.CrossRefGoogle Scholar
Harada, S., Tanaka, K., and Inui, H., “Thermoelectric properties and crystallographic shear structures in titanium oxides of the Magneli phases,” J. Appl. Phy., vol. 108, no. 8, 2010.CrossRefGoogle Scholar
Strukov, D.B., Alibart, F., and Williams, R.S., “Thermophoresis/diffusion as the plausible mechanism for unipolar resistive switching in metal-oxide-metal memristors,” Appl. Phys. A, vol. 107, no. 3, pp. 509–518, 2012.CrossRefGoogle Scholar