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Excitation Time Dependence of Luminescence Decay in Thermally Oxidized Porous Si

Published online by Cambridge University Press:  28 February 2011

K. Shiba ,
S. Miyazaki  and
M. Hirose
K. Shiba
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
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Abstract

Thermally oxidized porous silicon shows stable visible luminescence under laser irradiation. The photoluminescence decay has been measured in the temporal range from microsecond to millisecond. The decay curve is well fitted to a stretched exponential function. The mean lifetime of the luminescence increases with increasing the excitation pulse width. It is also found that the higher energy emission exhibits a faster decay compared with the lower energy emission at 293K, while at 18K it is reversed. The results are explained by a model in which photogenerated carriers are captured by localized radiative centers through a thermally assisted tunneling mechanism

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 537
Copyright
Copyright © Materials Research Society 1995

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References

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