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Evaluation on Crystal and Optical Properties of AlN:Er Prepared by RF magnetron sputtering method

Published online by Cambridge University Press:  01 February 2011

Shin-ichiro Uekusa ,
Takahiko Ohno ,
Tomoyuki Arai  and
Hiroshi Miura
Shin-ichiro Uekusa
Affiliation:
[email protected], Meiji University, Science and Technology, A816 1-1-1 Higashimita Tama-ku, Kawasaki-shi, 214-8571, Japan, 044-934-7306, 044-934-7909
Takahiko Ohno
Affiliation:
[email protected], Meiji University, Science and Technology, A816 1-1-1 Higashimita Tama-ku, Kawasaki-shi, 214-8571, Japan
Tomoyuki Arai
Affiliation:
[email protected], Meiji University, Science and Technology, A816 1-1-1 Higashimita Tama-ku, Kawasaki-shi, 214-8571, Japan
Hiroshi Miura
Affiliation:
[email protected], Meiji University, Science and Technology, A816 1-1-1 Higashimita Tama-ku, Kawasaki-shi, 214-8571, Japan
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Abstract

The Er that is rare earth element causes luminescence at 1540 nm, which is a low loss transmission window in silica-based fibers used in optical communications. Moreover, it is known that the temperature quenching of the luminescence of Er becomes smaller with the wide band gap of the host material. We report on the photoluminescence (PL) characteristic and X-ray diffraction (XRD) of AlN:Er thin films which are deposited by RF reactive magnetron co-sputtering method. All the thin films were deposited by RF reactive magnetron co-sputtering method from a 99.999 % Al target and 99.99 % Er chips in a nitrogen gas (99.9998 %) atmosphere. The thin films were achieved with a discharge power of 250 W in a total pressure of 5.0∼10-3 Torr, and the deposition times were one hour. After the deposited, these samples were annealed for 30 minutes in the temperature range from 400 to 900° in a nitrogen gas (99.999 %) atmosphere with an infrared lamp heater. PL spectra of AlN:Er were measured using the 325 nm line of a He-Cd laser at 15 K. Consequently, we observed PL spectra around 1500 nm. The strong luminescence of peak wavelength at 1538 nm is based on the intra-4f emitting centers of Er. We report systematically the experimental results of PL and XRD.

Keywords

ErIII-Voptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-03
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Oliveira, J.C., Cavaleiro, A., Vieira, M.T., Bigot, L., Garapon, C., Mugnier, J. and Jacquier, B.: Thin Solid Films 446 (2004) 264–270.Google Scholar
2. Dimitrova, V.I., Van Patten, P.G., Richardson, H. and Kordesch, M.E.: Applied Surface Science 175–176 (2001) 480–483.Google Scholar
3. Pearton, S.J., Abernathy, C. R. and Mackenzie, J.D.: Appl. Phys. Lett. 71 (1997) 1807–1809.Google Scholar
4. Lorenz, K., Alves, E., Monteiro, T., Soares, M.J., Peres, M. and Smulders, P.J.M: Nuclear Instruments and Methods in Physics Research B 242 (2006) 307–310.Google Scholar
5. Kim, S., Rhee, S. J., Turnbull, D. A., Li, X., Coleman, J.J. and Bishop, S. G.: Appl. Phys. Lett. 71 (1997) 2662–2664.Google Scholar
6. Oliveira, J.C., Cavaleiro, A., Vieira, M.T., Bigot, L., Garapon, C., Jacquier, B. and Mugnier, J.: Optical Materials 24 (2003) 321–325.Google Scholar
7. Thaik, Myo and Hommerich, U.: Appl. Phys. Lett. 71 (1997) 2641–2643.Google Scholar
8. Oliveira, J.C., Cavaleiro, A. and Vieira, M.T.: Surface and Coatings Technology 132 (2000) 99–104.Google Scholar
9. Lu, F., Carius, R., Alam, A., Heuken, M., Rizzi, A. and Buchal, Ch.: Thin Solid Films 425 (2003) 171–174.Google Scholar
10. Lozykowski, H.J., Jadwisienczak, W.M., Bensaoula, A., Monteiro, O.: Microelectronics Journal 36 (2005) 453–455.Google Scholar