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Evaluation of Silicon Photodiode as X and Gamma-Ray Detector at Room Temperature

Published online by Cambridge University Press:  21 February 2011

V. Cimpoca ,
G.H. Caragheorgheopol ,
D. Lazarovici ,
C. Lazarovici  and
R. Ruscu
V. Cimpoca
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
G.H. Caragheorgheopol
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
D. Lazarovici
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
C. Lazarovici
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
R. Ruscu
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
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Abstract

A silicon photodiode 10 sqmm area designed for 0,45 A/W and maximum sensitivity at 900 μm, was tested as X and gamma-ray detector in the 6-122 keV range. The simple structure, good manufacturing and passivating for a NIP photodiode (6 KΩcm,p- type material) gives a yield of 20% from batch with suitable characteristics for low energy X and gamma-ray detection. A cheap nuclear detector for technical measurements results. Evaluation and analysis of parameters in X and gamma detection is made for these silicon structures; they are mounted on TO-8 holders without entrance lenses. The applications proposed namely the composition test of alloys (with known matrix) by X-ray fluorescence analysis and in radiation safety field (absorbed dose survey), ex. in radiological clinics defectoscopic laboratories or in front of video displays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 579
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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