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Etitanium Nitride Barrier Metallization Techniques for ULSI Semiconductor Devices

Published online by Cambridge University Press:  25 February 2011

Sunny Chiang ,
Rudi Hendel  and
Fang Zhang
Sunny Chiang
Affiliation:
Materials Research Corporation, Orangeburg, NY, 10962
Rudi Hendel
Affiliation:
Materials Research Corporation, Orangeburg, NY, 10962
Fang Zhang
Affiliation:
Materials Research Corporation, Orangeburg, NY, 10962
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Abstract

High quality barriers of sputter deposited titanium nitride (TiN) are critical elements of advanced ULSI integrated circuits. We have examined the effect of eight variables on eight parameters which may affect device characteristics and the ability to incorporate TiN into the production process. We will discuss the interaction of the variables with the properties of the deposited TiN and indicate in particular the combination of variables which lead to optimum barrier properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 813
Copyright
Copyright © Materials Research Society 1992

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References

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