Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-28T18:36:20.557Z Has data issue: false hasContentIssue false
  • English
  • Français

Estimation of Junction Temperature in Operating Light Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

Md. Shahrukh Sakhawat ,
Arindra N Guha ,
Okechukwu Akpa ,
Ping Z Hagler ,
Dake Wang ,
Minseo Park  and
Kalyankumar Das
Md. Shahrukh Sakhawat
Affiliation:
Tuskegee University, Electrical Engg, LHF Hall,Electrical Engg.,, Tuskegee University,, Tuskegee, AL, 36088, United States, 334-552-0557
Arindra N Guha
Affiliation:
[email protected], Tuskegee University, Electrical Engineering Department, Tuskegee, AL, 36088, United States
Okechukwu Akpa
Affiliation:
[email protected], Tuskegee University, Electrical Engineering Department, Tuskegee, AL, 36088, United States
Ping Z Hagler
Affiliation:
Auburn University, Physics Department, Auburn, AL, 36830, United States
Dake Wang
Affiliation:
Auburn University, Physics Department, Auburn, AL, 36830, United States
Minseo Park
Affiliation:
[email protected], Auburn University, Physics Department, Auburn, AL, 36830, United States
Kalyankumar Das
Affiliation:
[email protected], Tuskegee University, Electrical Engineering Department, Tuskegee, AL, 36088, United States
Get access

Abstract

Light emitting diodes (LEDs) are normally operated at high current levels resulting in substantial junction heating. However, the junction temperature cannot be measured directly. In the study reported here, it was attempted to estimate junction temperature in LEDs with peak emission 400 nm. Temperature was estimated from current-voltage (I-V) measurements as a function temperature and peak-shift of optical emission spectra with increasing temperature. For a diode operated at a current-level of 100 mA, a temperature of 100 °C was estimate from current voltage measurement and 160 °C from the peak-shift in the optical emission spectra. The difference in temperature estimated using the two different technique is not understood at this point.

Keywords

semiconductingoptoelectronicoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-13
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Xi, Y. and Schubert, E. F., 2004. “Junction-Temperature measurement in GaN ultraviolet light emitting diodes using diode forward voltage method” Appl. Phys. Letters, vol 35, #12, p. 2163.Google Scholar
2. http://www.ioffe.rssi.ru/SVA/NSM/semicond/.Google Scholar