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Esr of Rare Earth Impurities (Dy3+, Er3+, Yb3+) in The Narrow Gap Semiconductor PbTE.

Published online by Cambridge University Press:  21 February 2011

A.M. Gennaro ,
G.B. Martins ,
C. Rettori ,
G.E. Barberis  and
C.Y. An
A.M. Gennaro
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas (SP), Brazil
G.B. Martins
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas (SP), Brazil
C. Rettori
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas (SP), Brazil
G.E. Barberis
Affiliation:
Instituto de Fisica, UNICAMP, CP 6165, 13081, Campinas (SP), Brazil
C.Y. An
Affiliation:
Instituto Nacional de Pesquisas Espaciais, INPE, CP 5125, 12201, São José dos Campos (SP), Brazil
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Abstract

Electron Spin Resonance experiments of several diluted rare-earths (Dy3+, Er3+, Yb3+) in the narrow gap semiconductor PbTe show ground states appropriated with a cubic crystal field splitting of the lowest multiplet (J). The data permits the determination of the sign and ratio of the cubic crystal field parameters A4 <r4>and A6< r6 >. These results suggest that the rare-earths substitute the Pb2+ ions and that the crystal field is mainly associated to an octahedron of Te2− ions. The observed ESR spectra also show lower symmetry sites probably associated with nearest neighbor Pb2+ vacancies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 213
Copyright
Copyright © Materials Research Society 1993

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