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Epitaxial Si1-xGex Films and Superlattice Structures Grown by CVD for Infrared Photodetectors

Published online by Cambridge University Press:  10 February 2011

L. Maddiona ,
S. Coffa ,
S. Lorenti  and
C. Bongiorno
L. Maddiona
Affiliation:
Si-optoelectronics&post Silicon Technologies, Corporate R&D, ST Microelectronics, Catania, Italy
S. Coffa
Affiliation:
Si-optoelectronics&post Silicon Technologies, Corporate R&D, ST Microelectronics, Catania, Italy
S. Lorenti
Affiliation:
DSG R&D, STMicroelectronics, Catania, Italy
C. Bongiorno
Affiliation:
Dipartimento di Scienze Chimiche, Università di Catania, Catania, Italy
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Abstract

Integration of photodetectors with high responsitivity in the near infrared (1.3-1.55 μm) on standard Si electronic circuits is important for a variety of applications in the field of on-chip, local area and long haul optical communications. In this work we report on a detailed structural and optical characterization of epitaxial Si1-xGex films and Si1-xGex /Si multilayers grown by chemical vapor deposition on (100) Si wafers. Cross-sectional transmission electron microscopy analyses show that metastable strained Si1-xGex films of few nanometer with x>40% can be deposited at low growth temperature and pressure. Absorption measurements on these films demonstrate the extension of the photo-response to 1.55 μm. Using these films as active layers Schottky integrated photodetectors have been fabricated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I4.7
Copyright
Copyright © Materials Research Society 2003

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