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Epitaxial Relations in Fluoride Films Grown on GaAs{lll} and Ge(lll) Substrates

Published online by Cambridge University Press:  22 February 2011

K. Tsutsui ,
H. Ishiwarya ,
T. Asano  and
S. Fijrukawa
K. Tsutsui
Affiliation:
Department of Applied Electronics, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, Japan.
H. Ishiwarya
Affiliation:
Department of Applied Electronics, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, Japan.
T. Asano
Affiliation:
Department of Applied Electronics, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, Japan.
S. Fijrukawa
Affiliation:
Department of Applied Electronics, Tokyo Institute of Technology, Nagatsuda, Midoriku, Yokohama 227, Japan.
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Abstract

Epitaxial relations in Cax Sr1−xF2(0⫶×⫶l) and BaF2 films grown on GaAs(111), (111) and Ge(111) substrates were investigated by He ion channeling analysis and transmission electron microscopy. Though the lattice constants of GaAs and Ge are nearly the same, the relations were found to be completely different. That is, the fluoride films on GaAs prefered to have an orientation identical to that of the substrate (type A orientation), whereas the orientation of the films on Ge was mainly rotated by 180° about the surface normal 〈111〉 axis (type B orientation). A hypothesis is proposed that the epitaxial relations in these systems are affected by the ionicity of the substrate as well as the lattice matching condition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 93
Copyright
Copyright © Materials Research Society 1985

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References

Referencecs

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