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Epitaxial Growth of Single Crystalline Ge Films on GaAs Substrates for CMOS Device Integration

Published online by Cambridge University Press:  01 February 2011

Hock-Chun Chin ,
Ming Zhu ,
Ganesh Samudra  and
Yee-Chia Yeo
Hock-Chun Chin
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Silicon Nano Device Laboratory, Singapore, 119260, Singapore
Ming Zhu
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Silicon Nano Device Laboratory, Singapore, 119260, Singapore
Ganesh Samudra
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Silicon Nano Device Laboratory, Singapore, 119260, Singapore
Yee-Chia Yeo
Affiliation:
[email protected], National University of Singapore, Department of Electrical and Computer Engineering, Silicon Nano Device Laboratory, Singapore, 119260, Singapore
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Abstract

We report a novel chemical vapor deposition (CVD) process for epitaxial growth of Ge film on GaAs substrate. The resultant layer exhibits device level quality, as shown by high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, high-resolution X-ray diffraction (HRXRD). In addition, atomic force microscopy (AFM) scanning indicates low RMS surface roughness of 5 Å. Secondary ion mass spectrometry (SIMS) reveals negligible out-diffusion of Ga and As into the Ge epilayer. By employing silane passivation, Ge p-MOSFET with TaN/HfO2 gate stack was fabricated on Ge/GaAs heterostructure for the first time, showing excellent output and pinch-off characteristics. A GaAs channel n-MOSFET was also fabricated, using similar SiH4 treatment during gate stack formation. These results reveal a potential solution to integrate Ge p-channel and GaAs n-channel MOSFET for advanced CMOS applications.

Keywords

III-VGedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C07-02
Copyright
Copyright © Materials Research Society 2008

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References

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