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The Epitaxial Growth of Metastable Phases

Published online by Cambridge University Press:  26 February 2011

Robin F. C. Farrow
Robin F. C. Farrow*
Affiliation:
Westinghouse Research and Development Center 1310 Beulah Road, Pittsburgh, PA 15235
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Abstract

Pseudomorphism, the epitaxial growth of metastable phases, is reviewed. Emphasis is given to recent developments in the qrowth and investigation of α-Sn films on InSb and CdTe since this is a case where there is a very large strain energy barrier to the metastable to stable phase transformation. As a result, pseudomorphic growth of α-Sn can be sustained to film thicknesses of ∼1 μm.

Progress towards stabilization of direct gap group IV semiconductors is discussed and possible applications of pseudomorphism considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 275
Copyright
Copyright © Materials Research Society 1985

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