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Epitaxial Growth of Bi2Sr2CuO6 Thin Films on Single Crystal Surfaces.

Published online by Cambridge University Press:  21 February 2011

Takuya Matsumoto ,
Tomoji Kawai  and
Shichio Kawai
Takuya Matsumoto
Affiliation:
The Institute of Scientific and Industrial Research, Osaka Univ., 8–1 Mihogaoka, Ibaraki, Osaka 567, Japan.
Tomoji Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka Univ., 8–1 Mihogaoka, Ibaraki, Osaka 567, Japan.
Shichio Kawai
Affiliation:
The Institute of Scientific and Industrial Research, Osaka Univ., 8–1 Mihogaoka, Ibaraki, Osaka 567, Japan.
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Abstract

Epitaxial growth of Bi2Sr2CuO6 thin films on a SrTiO3, a misoriented SrTiO3 and a Bi2Sr2CaCu2O8 single crystal have been performed using computer-controlled laser molecular beam epitaxy. On the SrTiO3 substrate, the 2201 films consist of two types of domains whose b-axes are perpendicular to each other. In contrast, the 2201 film on the 2212 single crystal has a complete single type of domains. Layer-by-layer growth with a half unit cell thickness of 2201 films is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 535
Copyright
Copyright © Materials Research Society 1992

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References

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