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Epitaxial Growth of Aluminum Nitride on Sapphire and Silicon

Published online by Cambridge University Press:  28 February 2011

K. Dovidenko ,
S. Oktyabrsky ,
J. Narayan  and
M. Razeghi
K. Dovidenko
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC, 27695-7916
S. Oktyabrsky
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC, 27695-7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh NC, 27695-7916
M. Razeghi
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208
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Abstract

The microstructural characteristics of wide band gap semiconductor, hexagonal A1N thin films on Si(100), (111), and sapphire (0001) and (10ī2) were studied by transmission electron microscopy (TEM) and x-ray diffraction. The films were grown by MOCVD from TMA1 + NH3 + N2 gas mixtures. Different degrees of film crystallinity were observed for films grown on α-A12O3 and Si substrates in different orientations. The epitaxial growth of high quality single crystalline A1N film on (0001) α-Al2O3 was demonstrated with a dislocation density of about 2*10 10cm−2 . The films on Si(111) and Si(100) substrates were textured with the c-axis of A1N being perpendicular to the substrate surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 1023
Copyright
Copyright © Materials Research Society 1995

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References

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