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Epitaxial GaN Layer Growth Using Nitrogen Enriched TiN Buffer Layers

Published online by Cambridge University Press:  01 February 2011

Kazuhiro Ito ,
Yu Uchida ,
Sang-jin Lee ,
Susumu Tsukimoto ,
Yuhei Ikemoto ,
Koji Hirata ,
Naoki Shibata  and
Masanori Murakami
Kazuhiro Ito
Affiliation:
[email protected], Kyoto University, Materials Science and Engineering, Yoshida-Honmachi, Sakyo-ku, Kyoto, N/A, 606-8501, Japan, +81-75-753-3579
Yu Uchida
Affiliation:
[email protected], Kyoto University, Department of Materials Science and Engineering, Yoshida-Honmachi, Sakyo-ku, Kyoto, N/A, 606-8501, Japan
Sang-jin Lee
Affiliation:
[email protected], Kyoto University, Department of Materials Science and Engineering, Yoshida-Honmachi, Sakyo-ku, Kyoto, N/A, 606-8501, Japan
Susumu Tsukimoto
Affiliation:
[email protected], Kyoto University, Department of Materials Science and Engineering, Yoshida-Honmachi, Sakyo-ku, Kyoto, N/A, 606-8501, Japan
Yuhei Ikemoto
Affiliation:
[email protected], Toyoda Gosei Co., Ltd., Optoelectronics Division, Inazawa, Aichi, N/A, 490-1312, Japan
Koji Hirata
Affiliation:
[email protected], Toyoda Gosei Co., Ltd., Optoelectronics Division, Inazawa, Aichi, N/A, 490-1312, Japan
Naoki Shibata
Affiliation:
[email protected], Toyoda Gosei Co., Ltd., Optoelectronics Division, Inazawa, Aichi, N/A, 490-1312, Japan
Masanori Murakami
Affiliation:
[email protected], Kyoto University, Department of Materials Science and Engineering, Yoshida-Honmachi, Sakyo-ku, Kyoto, N/A, 606-8501, Japan
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Abstract

About 20 years ago, the discovery of an AlN buffer layer lead to the breakthrough in epitaxial growth of GaN layers with mirror-like surface, using a metal organic chemical vapor deposition (MOCVD) technique on sapphire substrates. Since then, extensive efforts have been continued to develop a conductive buffer layer/substrate for MOCVD-grown GaN layers to improve light emission of GaN light-emitting diodes. In the present study, we produced MOCVD-grown, continuous, flat epitaxial GaN layers on nitrogen enriched TiN buffer layers with the upper limit of the nitrogen content of TiN deposited at room temperature (RT) on sapphire substrates. It was concluded that the nitrogen enrichment would reduce significantly the TiN/GaN interfacial energy. The RT deposition of the TiN buffer layers suppresses their grain growth during the nitrogen enrichment and the grain size refining must increase nucleation site of GaN. In addition, threading dislocation density in the GaN layers grown on TiN was much lower than that in the GaN layers grown on AlN.

Keywords

nucleation & growthnitridedefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 916: Symposium DD – Solid-State Lighting Materials and Devices , 2006 , 0916-DD04-06
Copyright
Copyright © Materials Research Society 2006

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