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Epitaxial and Conductive RuO2 Thin Films Grown on MgO and LaAlO3 by MOCVD

Published online by Cambridge University Press:  10 February 2011

P. Lu ,
S. He ,
F. X. Li  and
Q. X. Jia
P. Lu
Affiliation:
Department of Materials Science and Engineering, New Mexico Institute of Mining and Technology, Socorro, NM, 87801, U. S. A.
S. He
Affiliation:
Department of Materials Science and Engineering, New Mexico Institute of Mining and Technology, Socorro, NM, 87801, U. S. A.
F. X. Li
Affiliation:
Department of Materials Science and Engineering, New Mexico Institute of Mining and Technology, Socorro, NM, 87801, U. S. A.
Q. X. Jia
Affiliation:
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM 87545, U.S.A.
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Abstract

Conductive RuO2 thin films have been grown epitaxially on (100) MgO and (100) LaAlO3 substrates by metal-organic chemical vapor deposition(MOCVD) at different temperatures. The microstructural properties of the RuO2 films have been studied using x-ray diffraction and scanning electron microscopy. Different growth and microstructure properties were observed for the films deposited on the two substrates. The films on MgO are epitaxial at deposition temperatures as low as 350°C, and consist of two variants with an orientation relationship given by (110) RuO2 /(100) MgO and [001] RuO2//[011]MgO. The films on LaAlO3, on the other hand, are epitaxial only at deposition temperatures of 600°C and above, and contain four variants with an orientation relationship given by (200)RuO2//(100)LaAlO3 and [011] RuO2//[011] LaAlO3. The observed microstructures of epitaxially grown films can be explained based on geometric considerations for the films and substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 147
Copyright
Copyright © Materials Research Society 1999

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References

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