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Environmental Sensitivity of Pentacene Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

M. Breban ,
S. Mezhenny ,
D. R. Hines ,
D. B. Romero ,
V. W. Ballarotto  and
E. D. Williams
M. Breban
Affiliation:
The Laboratory for Physical Sciences, 8050 Greenmead Dr., College Park, MD 20740 The Department of Physics, University of Maryland, College Park, MD 20742
S. Mezhenny
Affiliation:
The Laboratory for Physical Sciences, 8050 Greenmead Dr., College Park, MD 20740 The Department of Physics, University of Maryland, College Park, MD 20742
D. R. Hines
Affiliation:
The Laboratory for Physical Sciences, 8050 Greenmead Dr., College Park, MD 20740 The Department of Physics, University of Maryland, College Park, MD 20742
D. B. Romero
Affiliation:
The Laboratory for Physical Sciences, 8050 Greenmead Dr., College Park, MD 20740 The Department of Physics, University of Maryland, College Park, MD 20742
V. W. Ballarotto
Affiliation:
The Laboratory for Physical Sciences, 8050 Greenmead Dr., College Park, MD 20740 The Department of Physics, University of Maryland, College Park, MD 20742
E. D. Williams
Affiliation:
The Laboratory for Physical Sciences, 8050 Greenmead Dr., College Park, MD 20740 The Department of Physics, University of Maryland, College Park, MD 20742
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Abstract

By alternating the gate voltage polarity of a pentacene thin film transistor, we show that the drain current is stabilized and thus the bias stress effect is overcome. This allows for controlled testing of the device sensitivity to environmental conditions. We find that the conductivity of the device decreases on the time scale of seconds when the device is exposed to water vapor, which is manifested through a decrease in mobility and a shift in the threshold voltage. Simple recombination modeling suggests that trapping is the responsible mechanism. However, the effects of water vapor can be reversed by exposing the device to dry nitrogen flow. The time scale for recovery is on the order of 10s of minutes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A4.4
Copyright
Copyright © Materials Research Society 2005

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References

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