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Enhanced Diffusion of Phosphorus at Grain Boundaries in Silicon*

Published online by Cambridge University Press:  15 February 2011

L.J. Cheng ,
C.M. Shyu  and
K.M. Stika
L.J. Cheng
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
C.M. Shyu
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
K.M. Stika
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
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Abstract

It is found that the grain boundaries in cast polycrystalline silicon material capable of enhancing diffusion always have strong recombination activities. Both phenomena could be related to the existence of dangling bonds at boundaries. Because the enhanced diffusion is an atomic transport phenomenon and the recombination is an electronic process, the relationship between the two phenomena is still not clear at this moment. The present study gives the first evidence that incoherent second order twins of {111/115} type are phosphorus diffusion-active.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 383
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

The research described in this paper was carried out for the Flat-Plate Solar Array Project, Jet Propulsion Laboratory, California Institute of Technology and was sponsored by the U.S. Department of Energy through an agreement with NASA.

References

REFERENCES

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