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Enhanced Diffusion During Rapid Thermal Annealing Of Indium And Boron In Double Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

E. Ganin ,
G. A. Sai-Halasz  and
T. O. Sedgwick
E. Ganin
Affiliation:
IBM TJ. Watson Research Center Yorktown Heights, NY 10598
G. A. Sai-Halasz
Affiliation:
IBM TJ. Watson Research Center Yorktown Heights, NY 10598
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Abstract

Experimental results on the diffusion and precipitation of In and B doubly implanted into Si, followed by rapid thermal treatment are reported. It was observed that In redistributes itself and accumulates in defected regions. The amount of motion of each species is enhanced by the presence of the other. While the B influences In diffusion probably through the same mechanism that leads to concentration enhancement, the effect of In on B is not clear. There is no correlation with strain and no apparent chemical effects. Also the presence of B facilitates the sweeping out of In during low temperature solid phase regrowth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 33
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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