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Endor Spectroscopy on Deep Level Defects in Gaas

Published online by Cambridge University Press:  26 February 2011

J.-M. Spaeth ,
A. Gorger ,
D. M. Hofmann  and
B. K. Meyer
J.-M. Spaeth
Affiliation:
University of Paderborn, FB 6, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
A. Gorger
Affiliation:
University of Paderborn, FB 6, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
D. M. Hofmann
Affiliation:
University of Paderborn, FB 6, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
B. K. Meyer
Affiliation:
University of Paderborn, FB 6, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
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Abstract

With optically detected electron spin resonance (ODESR) and electron nuclear double resonance (ODENDOR) the following deep level defects in s.i. LEC-grown GaAs were investigated: EL2 defects in undoped GaAs and VGa2+ and VGa3+ defects in V-doped GaAs. This paper summarizes the major results: (i) the double donor defect EL2 in an (AsGa-Asi+) pair defect, which is distributed rather homogeneously across an as-grown wafer. After inverted thermal conversion treatment it is destroyed, and 3 new paramagnetic defects appear. EL2 is recovered after annealing at ca. 800 °C, while the 3 new defects disappear. (ii) A new ESR spectrum due to VGa2+ was measured. It is shown for the first time for a 3dn impurity in semiconductors that VGa3+(3d3)is in a low spin state (S = 1/2) in accordance with recent theoretical predictions. A deep level defect at Ev + (0.2–0.4) eV is discovered, which is probably the defect needed for explaining the s.i. properties of V-doped GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 363
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1]Holmes, D.E., Elliott, K.R., Chen, R.T. and Kirkpatrik, C.G., in Semi-Insulating III-V Materials, edited by Makram-Ebeid, S. and Tuck, B. (Shiva, Nentwich, 1982), p. 19Google Scholar
[2]Tsukada, N., Kikuta, T. and Ishida, K., Jap. J. AppI. Phys. 24, L689 (1985)Google Scholar
[3]Hofmann, K.M., Meyer, B.K., Lohse, F. and Spaeth, J.-M., Phys. Rev. Lett. 53, 1187 (1984)Google Scholar
[4]Meyer, B.K., Hofmann, D.M., Niklas, J.R. and Spaeth, J.-M., Phys. Rev. B 36, 1332 (1987)Google Scholar
[5]Spaeth, J.-M., Hofmann, D.M., Heinemann, M. and Meyer, B.K., Proc. of the 14th Int. Symp. on GaAs and Related Compounds, Heraklion, Crete, Greece, 1987Google Scholar
[6]von Bardeleben, H.J., Stievenard, D. and Bourgoin, J.C., Appl. Phys. Lett. 47, 970 (1985)Google Scholar
[7]Levinson, M., Proc. of 14th Int. Symp. on GaAs and Related Compounds, Heraklion, Crete, Greece, 1987Google Scholar
[8]Kaufmann, U., Ennen, H., Schneider, J., Wörner, R., Weber, J. and Köhl, F., Phys. Rev. B 25, 5598 (1982)Google Scholar
[9]Vasson, A.M., Vasson, A., Bates, C.A., Labadz, A.F., J. Phys. C: Solid State Phys. 17, L837–841 (1984)Google Scholar
[10]Ulrici, W., Friedland, K., Eaves, L. and Halliday, D.P., phys. stat. sol. (b) 131, 719 (1985)Google Scholar
[11]Hennel, A.M., Brandt, C.D., Ko, K.Y., Lagowski, J. and Gatos, H.C., J. Appl. Phys. 62, 163 (1987)Google Scholar
[12]Clerjaud, B., J. Phys. C: Solid State Phys. 18, 3615 (1985)Google Scholar
[13]Fazzio, A., Caldas, M.J. and Zunger, A., Phys. Rev. B 30, 3430 (1984)Google Scholar
[14]Katayama-Yoshida, H. and Zunger, A., Phys. Rev. B 33, 2961 (1986)Google Scholar
[15]Hage, J., Niklas, J.R. and Spaeth, J.-M., J. Electron. Mater. a14, 1051 (1984)Google Scholar
[16]Meyer, B.K., Spaeth, J.-M. and Scheffler, M., Phys. Rev. Lett. 52, 851 (1984)Google Scholar
[17]Hofmann, D.M., Dissertation Paderborn, 1987Google Scholar
[18]Hofmann, D.M., Meyer, B.K. and Spaeth, J.-M., to be publishedGoogle Scholar
[19]Ahlers, F.J., Lohse, F., Spaeth, J.-M. and Mollenauer, L.M., Phys. Rev. B 28, 1249 (1983)Google Scholar
[20]von Engelen, P., Phys. Rev. B 22, 3144 (1980)Google Scholar
[21]Meyer, B.K., Hofmann, D.M. and Spaeth, J.-M., J. Phys. C: Solid State Phys. 20, 2445 (1987)Google Scholar
[22]Windscheif, J., Baeumler, M. and Kaufmann, U., Appl. Phys. Lett. 46, 661 (1985)Google Scholar
[23]Dobrilla, P., Blakemore, J.S., McCarmont, A.J., Gleason, R.K. and Koyama, R.Y., Appl. Phys. Lett. 47, 602 (1985)Google Scholar
[24]Martin, G.M., Appl. Phys. Lett. 39, 747 (1981)Google Scholar
[25]Wilkening, W., Kaufmann, U. and Baeumler, M., private communication, 1987Google Scholar
[26]Walukiewicz, W., Bourret, E.D., Yan, W.F., Murray, R.E., Haller, E.E. and Bliss, D.F., Proc. Int. Symp. Defects Recognition and Image Processing (Shiva Publ.), in pressGoogle Scholar
[27]Wagner, J., Seelewind, A. and Kaufmann, U., Appl. Phys. Lett. 48, 1054 (1986)Google Scholar
[28]Lagowski, J., Gatos, H.C., Kang, C.H., Skowronski, M., Ko, K.Y. and Lin, D.G., Appl. Phys. Lett. 49, 892 (1986)Google Scholar
[29]Mollenauer, L.F. and Pan, P., Phys. Rev. B 6, 772 (1972)Google Scholar
[30]Gbrger, A., Hennel, A.M., Meyer, B.K. and Spaeth, J.-M., to be published.Google Scholar