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Electronic Structure of Polycrystalline PECVD Diamond Surfaces

Published online by Cambridge University Press:  10 February 2011

T. P. Humphreys ,
D. P. Malta ,
R. E. Thomas ,
J. B. Posthill ,
M. J. Mantini  and
R. J. Markunas
T. P. Humphreys
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
D. P. Malta
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
R. E. Thomas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
M. J. Mantini
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709-2194.
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Abstract

Ultraviolet and X-ray photoelectron spectroscopy techniques have been employed in a preliminary study of the electronic structure of polycrystalline diamond films that have been grown on Si substrates by if-plasma enhanced chemical vapor deposition using water/ethanol growth chemistries. In particular, polycrystalline diamond films with distinctly different surface morphologies and Raman scattering characteristics have been investigated. Corresponding ultraviolet photoemission spectra from air-exposed samples have shown the presence of a prominent low-energy secondary electron emission peak indicative of a negative electron affinity (NEA) surface. Chemical stability of the polycrystalline diamond NEA surface has been demonstrated following conventional acid cleans and hydrogen plasma processing. In contrast, an oxygen (20%)/Ar plasma exposure has been shown to extinguish the photoemission of low-energy secondary electrons and remove the NEA. However, by employing a high-temperature anneal at 750 °C for 15 min in ultra-high vacuum the NEA surface can be restored. Compared to NEA single crystal diamond surfaces the photoexcited low-energy electron emission from chemical vapor deposited polycrystalline diamond films is more robust.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 133
Copyright
Copyright © Materials Research Society 1996

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References

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