Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-28T08:19:49.290Z Has data issue: false hasContentIssue false
  • English
  • Français

Electronic properties of the ZnO:Al/n-Si (100), (110) and (111) interfaces

Published online by Cambridge University Press:  09 June 2014

Per Lindberg ,
Vincent Quemener ,
Kristin Bergum ,
Jiantuo Gan ,
Bengt G. Svensson  and
Edouard V. Monakhov
Per Lindberg
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
Vincent Quemener
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
Kristin Bergum
Affiliation:
Department of Chemistry/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1126 Blindern, N-0318 Oslo, Norway.
Jiantuo Gan
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
Bengt G. Svensson
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
Edouard V. Monakhov
Affiliation:
Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway.
Get access

Abstract

Aluminum doped ZnO (AZO) has been deposited on (100), (110) and (111) oriented n-type Si and on fused silica by atomic layer deposition (ALD). The films have been post deposition annealed in the temperature range 200-500 οC. The AZO films have been characterized by X-ray diffraction (XRD), Hall and transmittance measurements. Circular diodes have been fabricated from the AZO/Si structures and characterized by current-voltage (IV) and deep level transient spectroscopy (DLTS). The AZO films form Schottky junctions with the Si substrates for all the crystallographic orientations. It is established that after post deposition annealing the structure AZO/n-Si (110) is distinguished as the system with largest rectification.

Keywords

deep level transient spectroscopy (DLTS)SiII-VI
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1699: Symposium LL – Transparent Electrodes , 2014 , mrss14-1699-ll05-04
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Brillson ch, L. J.. Surfaces and Interfaces of Zink Oxide in Oxide Semiconductors, edited by Svensson, B.G., Pearton, S. J., Jagadish, C., (Elsevier Science Publisher, 2013) pp. 105–157.10.1016/B978-0-12-396489-2.00004-7CrossRefGoogle Scholar
Quemener, V., Alnes, M., Vines, L., Nilsen, O., Fjellvåg, H., Monakhov, E. V. and Svensson, B. G., Sol. St. Phen. 178, 130 (2011)10.4028/www.scientific.net/SSP.178-179.130CrossRefGoogle Scholar
Janotti, A., and Van de Walle, C G., Rep. Prog. Phys. 72, 126501 (2009).10.1088/0034-4885/72/12/126501CrossRefGoogle Scholar
Quemener, V., Vines, L., Monakhov, E.V. and Svensson, B.G., Thin Sol. Films 519, 5763 (2011).10.1016/j.tsf.2010.12.204CrossRefGoogle Scholar
Romero, R., Lòpez, M.C., Leinen, D., Martìn, F., and Ramos-Barrado, J.R.. Mater. Sci. Eng. B, 110, 87 (2004).10.1016/j.mseb.2004.03.010CrossRefGoogle Scholar
Yanguas-Gil, A., Peterson, K. E., and Elam, J. W., Chem. Mater. 23, 4295 (2011)10.1021/cm2014576CrossRefGoogle Scholar
Bang, J. and Chang, K. J., Appl. Phys. Lett. 92, 132109 (2008).10.1063/1.2906379CrossRefGoogle Scholar
Janotti, A. and Van de Walle, G. C., Phys. Rev. B 76, 165202 (2007).10.1103/PhysRevB.76.165202CrossRefGoogle Scholar
Major, S., Banerjee, A. and Chopra, K.L., Thin Sol. Films, 122, 31 (1984).10.1016/0040-6090(84)90376-6CrossRefGoogle Scholar
Nelson, J. The Physics of Solar Cells, (Imperial Collage Press, London, 2003) pp. 9–15.10.1142/p276CrossRefGoogle Scholar
Sze, S. M., Kwok, K. N. Physics of semiconductor devices, (John Wiley & Sons, New Jersey 2006) pp. 393–395.10.1002/0470068329CrossRefGoogle Scholar