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Electronic and Optical Properties of Deep Donors in Hydrogenated AlxGa1-xAs:Si.

Published online by Cambridge University Press:  25 February 2011

R. Mostefaoui ,
R. Legros ,
J. Chevallier ,
C.W. Tu  and
R.F. Kopf
R. Mostefaoui
Affiliation:
Laboratoire de Physique des Solides, CNRS, 1 Place A.Briand, 92195 Meudon Cedex, FRANCE.
R. Legros
Affiliation:
Laboratoire de Physique des Solides, CNRS, 1 Place A.Briand, 92195 Meudon Cedex, FRANCE.
J. Chevallier
Affiliation:
Laboratoire de Physique des Solides, CNRS, 1 Place A.Briand, 92195 Meudon Cedex, FRANCE.
C.W. Tu
Affiliation:
A.T.T. Bell Laboratories, Murray Hill, New Jersey 07974, USA.
R.F. Kopf
Affiliation:
A.T.T. Bell Laboratories, Murray Hill, New Jersey 07974, USA.
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Abstract:

Transient conductivity and photoconductivity experiments have been performed on hydrogenated Al0.37Ga0.63As:Si epilayers. The recapture kinetics of free electrons on the remaining deep donors is significantly affected under hydrogena-tion. The energy barrier height for capture on the deep donors drops from 210mev in the reference sample to 40mev in the hydrogenated sample. We also note a shift toward higher energies of the photoionization cross section versus photon energy curve. Different models are proposed for explaining the data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 793
Copyright
Copyright © Materials Research Society 1990

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References

References:

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