Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-28T10:37:18.476Z Has data issue: false hasContentIssue false
  • English
  • Français

Electron Irradiation on Amorphous Silicon

Published online by Cambridge University Press:  11 February 2011

Ju-Yin Cheng  and
J. Murray
Ju-Yin Cheng
Affiliation:
Department of Material Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, U.S.A.
J. Murray
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, U.S.A.
Get access

Abstract

For the first time we use fluctuation electron microscopy to study the effect of electron irradiation on amorphous silicon. Before showing the results, we compare two variable coherence methods, hollow cone and dark field. These techniques have been successfully implemented in the Philips CM12, JEOL 4000 and Hitachi 9000 microscopes. The image fluctuations for ion-implanted and vacuum-deposited amorphous silicon can be reliably measured under the conditions used in these microscopes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.8
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Treacy, M. M. J. and Gibson, J. M., Ultramicroscopy 52, 31 (1993).Google Scholar
Gibson, J. M., Treacy, M. M. J., and Voyles, P. M., Ultramicroscopy 83, 169 (2000).Google Scholar
3. Krakow, W. and Howland, L. A., Ultramicroscopy 2, 53 (1976).Google Scholar
4. Gibson, J. M., Ph.D. thesis, University of Cambridge, 1978.Google Scholar
5. Cheng, Ju-Yin, Gibson, J. M., Jacobson, D. C., J. Mater. Res. 16, 3030 (2001).Google Scholar
6. Cheng, Ju-Yin, and Gibson, J. M., Baldo, P. M., and Kestel, B. J., J. Vac. Sci. & Tech. A, 20 1855 (2002).Google Scholar
7. Treacy, M. M. J. and Gibson, J. M., Inst. Phys. Conf. Ser. 153, 433 (1997).Google Scholar
8. Hollar, E. P., Robertson, I. M., and Jencic, I., Mater. Res. Soc. Symp. Proc. 647, O14.4.1 (2001).Google Scholar
9. Voyles, P. M., Gerbi, J. E., Treacy, M. M. J., Gibson, J. M., and Abelson, J. R., Phys. Rev. Lett. 86, 5514 (2001).Google Scholar
10. Voyles, P.M., Treacy, M. M. J., Gibson, J. M., Jin, H-C., and Abelson, J. R., Mater. Res. Soc. Symp. Proc. 589, 155 (2001).Google Scholar
11. Nastasi, M., Mayer, J. W., and Hirvonen, J. K., in Ion-Solid Interactions (Cambridge University Press, New York, 1996), p. 99–105.Google Scholar
12. Jencic, I., Bench, M. W., and Robertson, I. M., J. Appl. Phys. 78, 974 (1995).Google Scholar