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Electron Beam Induced Two-State Noise in Carbon Nanotubes

Published online by Cambridge University Press:  31 January 2011

Jack Chan ,
Brian G. Burke ,
Chong Hu ,
Joe Campbell ,
Lloyd Harriott  and
Keith A. Williams
Jack Chan
Affiliation:
[email protected], University of Virginia, Physics, Charlottesville, Virginia, United States
Brian G. Burke
Affiliation:
[email protected], University of Virginia, Physics, 382 McCormick Rd., Charlottesville, Virginia, 22904, United States
Chong Hu
Affiliation:
[email protected], University of Virginia, Electrical and Computer Engineering, Charlottesville, Virginia, United States
Joe Campbell
Affiliation:
[email protected], University of Virginia, Electrical and Computer Engineering, Charlottesville, Virginia, United States
Lloyd Harriott
Affiliation:
[email protected], University of Virginia, Electrical and Computer Engineering, Charlottesville, Virginia, United States
Keith A. Williams
Affiliation:
[email protected], University of Virginia, Physics, Charlottesville, Virginia, United States
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Abstract

Discrete current switching is induced in carbon nanotubes by electron beam irradiation. Switching amplitudes of 3% to 6% are observed at room temperature. Switching is created by electron beam exposure with dosage as low as 1000 pC/cm. Relative switching amplitude remains constant as the bias voltage varies, suggesting that current fluctuation is dominated by mobility fluctuation. Changes in the noise power spectral density following electron beam exposure will be discussed.

Keywords

electron irradiationdeviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1204: Symposium K – Nanotubes and Related Nanostructures-2009 , 2009 , 1204-K18-10
Copyright
Copyright © Materials Research Society 2010

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References

1. Rius, G.. et al., Microelectronics Engineering 84, 1596 (2007).Google Scholar
2. Yuzvinsky, T. D., Fennimore, A. M., Mickelson, W., Esquivias, C. and Zettl, A., Appl. Phys lett. 86, 053109 (2005).Google Scholar
3. Holmes-Siedle, A., Nucl. Instr. Methods A 121, 169 (1974).Google Scholar
4. Kanzaki, K.. et al., J. Appl. Phys. 101, 034317 (2007).Google Scholar
5. Suzuki, S., Kanzaki, K., Homma, Y., and Fukuba, S., Jpn. J. Appl. Phys. 43, L1118 (2004).Google Scholar
6. Terrones, M., Banhart, F., Grobert, N., Charlier, J. C., Terrones, H., and Ajayan, P. M., Phys. Rev. Lett. 89, 7 (2002).Google Scholar
7. Vijavaraghavan, A.. et al., Nano. Lett. 5, 8 (2005).Google Scholar
8. Marquardt, C. W.. et al., Nano. Lett. 8, 9 (2008).Google Scholar
9. Crespi, V. H., Chopra, N. G., Cohen, M. L., Zettl, A. and Louie, S. G., Phys. Rev. B 54, 8 (1996).Google Scholar
10. Collins, P. G., Fuhrer, M. S. and Zettl, A., Appl. Phys. Lett. 76, 7 (2000).Google Scholar
11. Snow, E. S., Novak, J. P., Lay, M. D. and Perkins, F. K., Appl. Phys. Lett. 85, 18 (2004).Google Scholar
12. Lin, Y., Appenzeller, J., Knoch, J., Chen, Z. and Avouris, Ph., Nano. Lett. 6, 930 (2006).Google Scholar
13. Chan, J.. et al., Phys. Rev. B 80, 033402 (2009).Google Scholar
14. Kim, U. J., Kim, K. H., Kim, K. T., Min, Y. and Park, W., Nanotech. 19, 285705 (2008).Google Scholar
15. Liu, F., Bao, M., Want, K. L., Zhang, D. and Zhou, C., Phys. Rev. B 74, 035438 (2006).Google Scholar
16. Peng, H. B., Hughes, M. E. and Golovchenko, J. A., Appl. Phys. Lett. 89, 243502 (2006).Google Scholar
17. Vasudevan, S.. et al., IEEE. Sensor Journal 8, 6 (2008).Google Scholar
18. Collins, P. G.. et al., Science 287, 1801 (2000).Google Scholar
19. Vijayaraghavan, A.. et al., J. Appl. Phys. 100, 024315 (2006).Google Scholar
20. Liu, K.. et al., JACS. 131, 62 (2009).Google Scholar
21. Lin, Y., Tsang, J. C., Freitag, M. and Avouris, Ph., Nanotech. 18, 295202 (2007).Google Scholar
22. Kong, J., Soh, H. T., Cassell, A. M., Quate, C. F. and Dai, H., Nature 395, 29 (1998).Google Scholar
23. Simons, M., Monteith, L. K. and Hauser, J. R., IEEE Transactions on Electronics Devices 15, 12 (1968).Google Scholar
24. Gdula, R. A., IEEE Transactions on Electronics Devices 26, 4 (1979).Google Scholar
25. Liu, F., Wang, K. L., Zhang, D. and Zhou, C., Appl. Phys.Lett. 89, 063116 (2006).Google Scholar
26. ishigami, M.. et al., Appl. Phys. Lett. 88, 203116 (2006).Google Scholar
27. Wang, N., Heinze, S. and Tersoff, J., Nano. Lett. 7, 913 (2007).Google Scholar