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Electron Beam Induced Carbon Depositionand Etching

Published online by Cambridge University Press:  11 February 2011

Y.-M. Sun ,
J. Eklund ,
Q. Wang ,
D. Gay  and
J. M. White
Y.-M. Sun
Affiliation:
Center for Materials Chemistry, Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA
J. Eklund
Affiliation:
Center for Materials Chemistry, Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA
Q. Wang
Affiliation:
Center for Materials Chemistry, Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA
D. Gay
Affiliation:
Center for Materials Chemistry, Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA
J. M. White
Affiliation:
Center for Materials Chemistry, Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA
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Abstract

Electron induced carbon deposition and etching was investigated by Auger electron spectroscopy in a custom designed vacuum system. The Auger electron spectrometer was used to provide a high flux electron beam to induce reactions and to monitor surface composition. During the e-beam induced deposition or etching, the gas phase pressure was 10-4 to 10-5 Torr. Several carbon precursors: benzene, cyclohexane and propane were used for deposition. The deposition rate depended on the precursor sticking coefficient and bonding structure. Among the three precursors tested, the deposition rate of carbon was cyclohexane > benzene > propane. The e-beam induced etching of carbon films was carried out in 1 × 10-4 torr oxygen ambient and the carbon film was prepared by reactive physical vapor deposition. The etching process can be divided into three stages: bulk film, interface, and substrate. For the bulk carbon film, the decrease of film thickness varies linearly with the e-beam flux, while at the interface, the film thickness shows an exponential decay with the electron flux. For the C in the Si substrate, a very slow etching rate was observed. The etching rate for bulk carbon film was ∼ 0.1 nm/min under the experimental conditions, which is equivalent tp 2.4 × 10-27 cm3/electron. At the interfacial region, the cross section of carbon removal by electrons was ∼ 4.6 × 10-21 cm2. Based on the change of the carbon line shape at the interface, we concluded that the etching rate is related to the chemical nature of the carbon species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y8.46
Copyright
Copyright © Materials Research Society 2003

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References

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