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Electrochemical Co-deposition of In-Se and Ga-Se Thin Films for Preparation of CIGS Solar Cells

Published online by Cambridge University Press:  15 March 2011

Serdar Aksu ,
Jiaxiong Wang  and
Bulent M. Basol
Serdar Aksu
Affiliation:
SoloPower Inc., 5981 Optical Court, San Jose, CA 95035, U.S.A.
Jiaxiong Wang
Affiliation:
SoloPower Inc., 5981 Optical Court, San Jose, CA 95035, U.S.A.
Bulent M. Basol
Affiliation:
SoloPower Inc., 5981 Optical Court, San Jose, CA 95035, U.S.A.
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Abstract

Electrochemical co-depositions of indium (In) with selenium (Se) and gallium (Ga) with selenium were carried out to obtain high-quality In-Se and Ga-Se films. The approach utilized full potential of complexation for the first time by using aqueous electroplating solutions containing complexing agents at alkaline regime. Complexing agents were employed to solubilize In and Ga ions at high pH and to bring their reduction potentials down, closer to that of Se. Since no appreciable complexation occurred between Se and the complexing agents, Se reduction potential could be independently controlled by the amount of dissolved Se. Tartrate and citrate were determined to be suitable complexing agents for In and Ga. By optimizing the concentrations of the metal salts, the complexing agents, the selenium source, pH and the electrodeposition current density, it was possible to obtain adherent and smooth In-Se and Ga-Se films with high repeatability and controllable In/Se and Ga/Se molar ratios.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1113: Symposium F – Low-Cost Solution-Based Deposition of Inorganic Films for Electronic/Photonic Devices , 2008 , 1113-F08-03
Copyright
Copyright © Materials Research Society 2009

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References

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