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Electrochemical and Material Study of Electroless Ternary Barriers for Copper Interconnects

Published online by Cambridge University Press:  10 February 2011

S. Lopatin ,
Y. Kim  and
Y. Shacham-Diamand
Y. Kim
Affiliation:
CORNELL UNIVERSITY, School of Electrical Engineering and the Cornell Nanofabrication Facility, Ithaca, NY 14853–5401
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Abstract

Electroless cobalt-rich CoWP ternary alloys with a low weight percent of tungsten (∼ 2 percent) and a high phosphorus content (∼11 weight percent) have been deposited in basic solution onto copper and cobalt in integrated Cu damascene structures. A capability of the electroless CoWP deposition to form conformal barrier/protection films was demonstrated. Conformal 10 nm thick CoWP layer was also formed on the sidewalls of 30–40 nm wide seam of aspect ratio about 5:1 on the top of 0.4 μm wide in-laid Cu line.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 433
Copyright
Copyright © Materials Research Society 1998

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References

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