Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T07:19:33.447Z Has data issue: false hasContentIssue false
  • English
  • Français

Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO2/Si System Investigated by Finite Element Method: Material-Constant Dependences

Published online by Cambridge University Press:  26 February 2011

Hirotake Okino ,
Masahiro Hayashi ,
Takashi Iijima ,
Shintaro Yokoyama ,
Hiroshi Funakubo ,
Nava Setter  and
Takashi Yamamoto
Hirotake Okino
Affiliation:
[email protected], National Defense Academy, Dept. of Communications Eng., 1-10-20 Hashirimizu, Yokosuka, Kanagawa, 239-8686, Japan, +81-46-841-3810, +81-48-844-5911
Masahiro Hayashi
Affiliation:
[email protected], National Defense Academy, Department of Communications Engineering, Japan
Takashi Iijima
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Research Institute of Instrumentation Frontier, Japan
Shintaro Yokoyama
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Japan
Hiroshi Funakubo
Affiliation:
[email protected], Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Japan
Nava Setter
Affiliation:
[email protected], Ecole Polytechnique Fédérale de Lausanne, Ceramic Laboratory, Switzerland
Takashi Yamamoto
Affiliation:
[email protected], National Defense Academy, Department of Communications Engineering, Japan
Get access

Abstract

Electric-field-induced displacements of PZT film capacitor Pt/PZT/Pt/SiO2/Si(100) were calculated by finite element method (FEM) with changing all piezoelectric and elastic constants of PZT so as to discuss how to evaluate intrinsic d33 of piezoelectric thin films. Two kinds of conditions, namely, “ideal conditions” and “second-best conditions” are discussed. The ideal conditions indicate that the diameter of top electrode φTE is equal to or less than PZT film thickness tPZT and continuous PZT is etched to isolate the capacitor from the continuous piezoelectric film layer. Under the ideal conditions, d33 measured by atomic force microscopy (AFM) and double beam interferometry (DBI) were the same value that was equal to intrinsic d33 of PZT and was independent of other material constants. Under the second-best conditions, i.e. 20×tPZT < φTE for DBI and 20×tPZT < φTE < 0.5×(tsub: substrate thickness) for AFM, measured d33 depended on only d31, s11, s12 and s13, and obeyed the Lefki's equation qualitatively. However, quantitative differences between FEM analysis and the Lefki's equation were not negligible.

Keywords

piezoresponsescanning probe microscopy (SPM)microelectro-mechanical (MEMS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T03-49
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kholkine, A. L., Wüetchrich, C., Taylor, D. V., and Setter, N., Rev. Sci. Instrum. 67, 1935 (1996).Google Scholar
2 Tsurumi, T., Ozawa, S., Abe, G., Ohashi, N., Wada, S., and Yamane, M., Jpn. J. Appl. Phys. 39, 5604 (2000).Google Scholar
3 Iijima, T., Ito, S., and Matsuda, H., Jpn. J. Appl. Phys. 41, 6735 (2002).Google Scholar
4 Gerber, P., Roelofs, A., Lohse, O., Kügeler, C., Tiedke, S., Böttger, U., and Waser, R., Rev. Sci. Instrum. 74, 2613 (2003).Google Scholar
5 Maiwa, H. and Ichinose, N., Jpn. J. Appl. Phys 39, 5403 (2000).Google Scholar
6 Bühlmann, S., Dwir, B., Baborowski, J., and Muralt, P., Appl. Phys. Lett. 80, 3195 (2002).Google Scholar
7 Nagarajan, V. et al. , Appl. Phys. Lett. 81, 4215 (2002).Google Scholar
8 Li, J.H., Chen, L., Nagarajan, V., Ramesh, R., and Roytburd, A. L., Appl Phys. Lett. 84, 2626 (2004).Google Scholar
9 Okino, H., Matsuda, H., Iijima, T., Yokoyama, S., Funakubo, H., and Yamamoto, T., Mater. Res. Soc. Symp. Proc. 784, 559 (2004).Google Scholar
10 Okino, H., Nakamura, K., Matsuda, H., Iijima, T., Yokoyama, S., Funakubo, H., and Yamamoto, T., Trans. Mater. Res. Soc. Jpn. 30, 47 (2005).Google Scholar
11 Lefki, K. and Dormans, G. J. M., J. Appl. Phys. 76, 1764 (1994).Google Scholar
12 Chen, L., Li, J.H., Slutsker, J., Ouyang, J., and Roytburd, A. L., J. Mater. Res. 19, 2853 (2004).Google Scholar
13 Berlincourt, D. A., Cmolik, C., and Jaffe, H., Proc. of Inst. Radio Eng. 48, 220 (1960).Google Scholar
14 Gerber, P., Roelofs, A., Kügeler, C., Böttger, U., Waser, R., and Prume, K., J. Appl. Phys. 96, 2800 (2004).Google Scholar
15 Kalinin, S. V., Karapetian, E., and Kachanov, M., Phys. Rev. B 70, 184101 (2004).Google Scholar