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Electrical Resistance Anomalies During Electromigration Testing of Cu Conductor Lines: Examples of Local Melting?

Published online by Cambridge University Press:  01 February 2011

Hongqing Zhang ,
Gan Wang  and
G. S. Cargill III
Hongqing Zhang
Affiliation:
[email protected] UniversityMaterials Science & Engineering5 E. Packer Ave.Bethlehem PA18015United States
Gan Wang
Affiliation:
[email protected], Lehigh University, Materials Science & Engineering, 5 E. Packer Ave., Bethlehem, PA, 18015, United States
G. S. Cargill III
Affiliation:
[email protected], Lehigh University, Materials Science & Engineering, 5 E. Packer Ave., Bethlehem, PA, 18015, United States
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Abstract

We have observed abrupt, reversible resistance changes during electromigration (EM) testing of 0.16μm thick, 100μm long damascene Cu conductor lines with TaN liners and W vias. Lines of 0.2μm, 0.8μm and 2μm widths were tested and compared. The tests were conducted at temperatures of 300C – 350C and with current densities of 0.6 × 106 A/cm2 to 1.6 × 106A/cm2. In most cases an incubation period with negligible resistance increase is followed by a period of continuous, gradual resistance increase, attributed to formation and growth of voids in the conductor line. With further EM, the resistance curves show spike like features, with a sudden resistance increase, followed by a resistance decrease, often to values close to those before the start of EM. In other cases, no resistance decrease occurs, and the line fails. We present resistance data, microstructural observations and thermal calculations that suggest that the resistance decrease results from sudden, local Joule heating melting of conductor line segments and voids being partially filled by the back-flowing liquid Cu, which then solidifies. In some cases line failure results from liquid Cu erupting through the top surface passivation layer, rather than flowing back to fill voids in the line.

Keywords

electromigrationCuthermal conductivity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F06-08
Copyright
Copyright © Materials Research Society 2006

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