Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-27T00:41:18.188Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Properties of TaOx Thin Films for ReRAM Prepared by Reactive RF Magnetron Sputtering Method

Published online by Cambridge University Press:  01 February 2011

Natsuki Fukuda ,
Hidenao Kurihara ,
Kazumasa Horita ,
Yoshiaki Yoshida ,
Yutaka Kokaze ,
Yutaka Nishioka  and
Koukou Suu
Natsuki Fukuda
Affiliation:
[email protected]
Hidenao Kurihara
Affiliation:
[email protected], Ulvac,Inc., Institute of Semiconductor and Electronics Technologies, Susono, Japan
Kazumasa Horita
Affiliation:
[email protected], Ulvac,Inc., Institute of Semiconductor and Electronics Technologies, Susono, Japan
Yoshiaki Yoshida
Affiliation:
[email protected], Ulvac,Inc., Institute of Semiconductor and Electronics Technologies, Susono, Japan
Yutaka Kokaze
Affiliation:
[email protected], Ulvac,Inc., Institute of Semiconductor and Electronics Technologies, Susono, Shizuoka, Japan
Yutaka Nishioka
Affiliation:
[email protected], Ulvac,Inc., Institute of Semiconductor and Electronics Technologies, Susono, Shizuoka, Japan
Koukou Suu
Affiliation:
[email protected], Ulvac,Inc., Institute of Semiconductor and Electronics Technologies, Susono, Shizuoka, Japan
Get access

Abstract

Recently the Flash Memory is scaling limit, Thus the Memory of various types is now under study for the next generation large capacity nonvolatile memory. Resistance random access memory (ReRAM) is attracts much attention due to its advantage for integration in the next generation nonvolatile memory, because it is depend on scaling by lithography compared with the Flash Memory of capacity type. The material for ReRAM is classified roughly into binary oxides and perovskite oxides. Several binary oxides such as a TaOx have the advantage for low-temperature process and low-cost materials compared with perovskite oxides such as a (Pr,Ca)MnO3 (PCMO). In this study, TaOx film with the thickness of 10nm were prepared by reactive RF magnetron sputtering on 8inch-Pt/Si substrate using a Ta metal target in oxygen ambient. The sputtering system was the multi chamber type mass production tool. The TaOx thin film was amorphous phase as a result of measurement by X-ray diffraction meter. Ta top electrodes with 50 um diameters were deposited on the surface of TaOx layer by the DC sputtering method using a shadow mask. The “Forming” voltage of TaOx-ReRAM was 5.0V. After “Forming” process, the “Set” and “Reset” voltage were 3.0V and –3.0V respectively. It has good switching properties with large on/off resistance ratio above 1,000.

Keywords

sputteringTaelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G12-12
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] International Technology Roadmap for Semiconductors 2009 Google Scholar
[2] Hickmott, T. W.: J. Appl. Phys. 33, 2669 (1962)Google Scholar
[3] Zhuang, W. W., Pan, W., Ulrich, B. D., Lee, J. J., Stecker, L., Burmaster, A., Evans, D. R., Hsu, S. T., Tajiri, M., Shimaoka, A., Inoue, K., Naka, T., Sakiyama, N. Awaya., Wang, Y., Liu, S. Q., Wu, N. J. and Ignatiev, A.: Tech. Dig. Int. Electron Devices Meet., San Francisco, 2002, p193 Google Scholar
[4] Beck, A., Bednorz, J. G., Gerber, Ch., Rossel, C. and Widmer, D.: Appl. Phys. Lett. 77, 139 (2000)Google Scholar
[5] Odagawa, A., Sato, H., Inoue, I. H., Akoh, H., Kawasaki, M., and Tokura, Y., Kanno, T. and Adachi, H.: Phys. Rev., B 70, 224403 (2004)Google Scholar
[6] Baek, I. G., Lee, M. S., Seo, S., Lee, M. J., Seo, D.H., Suh, D.-S., Park, J. C., Park, S. O., Kim, H. S., Yoo, I. K., Dhung, U-In and Moon, J. T.: Tech. Dig. Int. Electron Devices Meet., San Francisco, 2004, 23, 6, p587 Google Scholar
[7] Choi, B. J., Jeong, D. S., Kim, S. K., Rohde, C., Choi, S., Oh, J. H., Kim, H. J., Hwang, C. S., Szot, K., Waser, R., Reichenberg, B., Tiedke, S.: J. Appl. Phys. 98, pp033715 (2005)Google Scholar
[8] Lee, Heng-Yuan, Chen, Pang-Shiu, Wang, Ching-Chiun, Maikap, Siddheswar, Tzeng, Pei-Jer, Lin, Cha-Hsin, Lee, Lurng-Shehng, and Tsai, Ming-Jinn: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006, pp.288–289 Google Scholar
[9] Suu, Koukou, Miyaguchi, Yusuke, Masuda, T., Nishioka, Y. and Chu, Fan: TECHNICAL REPORT OF IEICE. ED2000-69, SDM2000-69 (200-06), p49–56 Google Scholar
[10] Jimbo, Takehito, Miyaguchi, Yuusuke, Kikuchi, Shin, Kimura, Isao, Tanimura, Michio, Suu, Koukou and Ishikawa, Michio: Integrated Ferroelectrics, 2002, Vol. 40, pp.105–112 Google Scholar