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Electrical Properties of Quantum Wells in III-NITRIDE Alloys and the Role of Defects

Published online by Cambridge University Press:  19 November 2013

Daniela Cavalcoli ,
Albert Minj ,
Saurabh Pandey ,
Beatrice Fraboni  and
Anna Cavallini
Daniela Cavalcoli
Affiliation:
Physics and Astronomy Department, University of Bologna, Viale C Berti Pichat 6/II, I-40127 Bologna, Italy
Albert Minj
Affiliation:
Physics and Astronomy Department, University of Bologna, Viale C Berti Pichat 6/II, I-40127 Bologna, Italy
Saurabh Pandey
Affiliation:
Physics and Astronomy Department, University of Bologna, Viale C Berti Pichat 6/II, I-40127 Bologna, Italy
Beatrice Fraboni
Affiliation:
Physics and Astronomy Department, University of Bologna, Viale C Berti Pichat 6/II, I-40127 Bologna, Italy
Anna Cavallini
Affiliation:
Physics and Astronomy Department, University of Bologna, Viale C Berti Pichat 6/II, I-40127 Bologna, Italy
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Abstract

III-nitrides (III-Ns) semiconductors and their alloys have shown in the last few years high potential for interesting applications in photonics and electronics. III-Ns based heterostructures (HS) have been under wide investigation for different applications such as high frequency transistors, ultraviolet photodetector, light emitters etc. In the present contribution a III-Ns based heterostructure, in particular the nearly lattice matched Al1-xInxN/AlN/GaN HS will be discussed. The formation of the two dimensional electron gas (2DEG), its origin, its electrical and optical properties, the confined subband states in the well and its effect on the conduction mechanisms have been studied. Moreover, extended defects and their effect on the degradation phenomena of the 2DEG have been analyzed.

Keywords

transportIII-NITRIDE Alloysdefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1617: Symposium 7E – Low-Dimensional Semiconductor Structures , 2013 , pp. 3 - 11
Copyright
Copyright © Materials Research Society 2013 

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References

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