Hostname: page-component-745bb68f8f-kw2vx Total loading time: 0 Render date: 2025-02-05T06:30:24.489Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical Evaluation of Simox Material and Integrated Devices

Published online by Cambridge University Press:  28 February 2011

Sorin Cristoloveanu
Sorin Cristoloveanu*
Affiliation:
Institut National Polytechnique de Grenoble, Laboratoire de Physique des Composants a Semicon-ducteurs (UA CNRS), ENSERG, 23 rue des Martyrs, Grenoble 38031, France
Get access

Abstract

Adequate techniques for the electrical characterization of SOI structures are reviewed and applied to reveal a coherent image of SIMOX material. Sheet resistance, low temperature Hall effect and photoconductivity measurements are analysed with respect to the processing conditions. Depth profiles are identified by spreading resistance, MOS-Hall devices and differential ellipsometry. After annealing at high temperature the activation of thermal donors, not new donors, is attenuated. The properties of front and buried interfaces are compared with each other and referred to implantation and annealing conditions. The measurements of the dynamic transconductance, charge pumping current and noise in MOSFET's are shown to provide easier and more relevant evaluation than conventional MOS capacitance techniques. The minority carrier generation is studied by separating the contributions of the volume, interfaces and sidewalk. Not only is the performance of transistors fabricated on SIMOX excellent, but additional gain is possible using the new concept of volume inversion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 335
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hemment, P.L.F., Maydell-Ondruesz, E., Stephens, K.G., Kilner, J.A., Butcher, J., Vacuum 34, 203 (1984).CrossRefGoogle Scholar
2 Tuppen, C.G., Taylor, M.R., Hemment, P.L.F., Arrowsmith, R.P., Thin Solid Films 131,233 (1985).Google Scholar
3 Hemment, P.L.F., in Semiconductor On Insulator and Thin Film Transistor Technology, edited by Chiang, A., Geis, M.W., and Pfeiffer, L. (Mat. Res. Soc. Proa, Pittsburgh, 1986) p. 207.Google Scholar
4 Margail, J., Stoemenos, I., Jaussaud, C., Dupuy, M., Martin, P., Blanchard, B., Bruel, M., in Energy Beam Solid Interactions and Transient Thermal Processing, edited by Nguyen, V.T. and Cullis, A.G. (Les Editions de Physique, Les Ulis, 1986) p. 519.Google Scholar
5 Stoemenos, J., Jaussaud, C., Bruel, M., Margail, J., J. Crystal Growth 73,546 (1985).Google Scholar
6 Celler, G.K., Hemment, P.L.F., West, K.W., Gibson, J.M., Appl. Phys. Lett. 48,532 (1986).Google Scholar
7 Cristoloveanu, S., Gardner, S., Jaussaud, C., Margail, J., Auberton-Herve, A.J., Bruel, M., J. Appl. Phys. 62, 2793 (1987).Google Scholar
8 Mogro-Campero, A., Love, R.P., Lewis, N., Hall, E.L., McConnell, M.D., J. ppl. Phys. 60,2103 (1986).Google Scholar
9 Hill, D., Fraundorf, P., Fraundorf, G., presented at the IEEE SOS/SOI Technology Workshop, Durango, CO, 1987.Google Scholar
10 Cristoloveanu, S., Wyncoll, J., Spinelli, P., Hemment, P., Arrowsmith, R., Physica 129B. 249 (1985).Google Scholar
11 Cristoloveanu, S., Pumfrey, J., Scheid, E., Hemment, P., Arrowsmith, R., Electron. Lett. 21,18 (1985).CrossRefGoogle Scholar
12 Cristoloveanu, S., in The Physics and Technology of Amorphous Si02 . Les Arcs, France, 1987.Google Scholar
13 Papaioannou, G., Cristoloveanu, S., Hemment, P.L.F., J. Appl. Phys., in press (1988).Google Scholar
14 Vettesse, F., Sicart, J., Robert, J.L., presented at the Internal GCIS Colloquium, Toulouse, France, 1987.Google Scholar
15 Mogro-Campero, A., J. Appl. Phys. 61,639 (1987).Google Scholar
16 Celler, G.K., Batstone, J.L., West, K.W., Hemment, P.L.F., Reeson, K.J., presented at the IEEE SOS/SOI Technology Workshop, Captiva, FL, 1986.Google Scholar
17 Balestra, F., Cristoloveanu, S., Benachir, M., Brini, J., Elewa, T., IEEE Electron Device Lett. EDL-8. 410 (1987).Google Scholar
18 Normand, P., Tsoukalas, D., Guillemot, N., presented at the IEEE SOS/SOI Technology Workshop, Durango, CO, 1987.Google Scholar
19 Partridge, S. and Godfrey, D. (private communication).Google Scholar
20 Cristoloveanu, S., Lee, J.H., Pumfrey, J., Davis, J.R., Arrowsmith, R.P., Hemment, P.L.F., J. Appl. Phys. 60,3199 (1986).Google Scholar
21 Harbeke, G., Steigmeier, E.F., Hemment, P., Reeson, K.J., Jastrzebski, L., Semiconductor Science and Technology, in press (1987).Google Scholar
22 Levy, M., Scheid, E., Cristoloveanu, S., Hemment, P., Thin Solid Films 148,127 (1987).CrossRefGoogle Scholar
23 Cristoloveanu, S., Scheid, E., Kamarinos, G., Davis, J.R., Arrowsmith, R.P., Taylor, M.R., Hemment, P.L.F., in Energy Beam Solid Interactions and Transient Thermal Processing, edited by Nguyen, V.T. and Cullis, A.G. (Les Editions de Physique, Les Ulis, 1986), p. 495.Google Scholar
24 Dutta, P., Chandler-Horowitz, D., Candela, G.A., Marchiando, J.F., Peckerar, M.C., presented at the IEEE SOS/SOI Technology Workshop, Durango, CO, 1987.Google Scholar
25 Mao, B.Y., Chen, C.E., Lam, H.W., presented at the IEEE SOS/SOI Technology Workshop, Captiva, FL, 1986.Google Scholar
26 Chater, R.J., Kilner, J.A., Scheid, E., Cristoloveanu, S., Hemment, P.L.F., Reeson, K.J., Proc. Int. Conf. Insulating Films on Semiconductors, Leuven, Belgium (1987).Google Scholar
27 Davis, J., Taylor, M., Spiller, G., Skevington, P., Hemment, P., Appl. Phys. Lett. 48,1279 (1986).CrossRefGoogle Scholar
28 Mao, B.Y., Chang, P.H., Chen, C.E., Lam, H.W., J. Appl. Phys. 62,2308 (1987).Google Scholar
29 Lee, J. H. and Cristoloveanu, S., IEEE Electron Device Lett. EDL-7.537 (1986).Google Scholar
30 Brady, F.T., Li, S.S., Burk, D.E., Krull, WA., presented at the IEEE SOS/SOI Technology Workshop, Durango, CO, 1987.Google Scholar
31 Ioannou, D.E., McLarty, P.K., Cole, J.W., Bernaki, S.E., presented at the IEEE SOS/SOI Technology Workshop, Durango, CO, 1987; S.S. Li, C.G. Choi, H.S. Chen, D.E. Burk, WA. Krull, IEEE SOS/SOI Technology Workshop.Google Scholar
32 Colinge, J.P., Hashimoto, K., Kamins, T., Chiang, S.Y., Liu, E.D., Peng, S., Rissman, P., IEEE Electron Device Lett. EDL-7.279 (1986).Google Scholar
33 Foster, D. J., Butler, A.L., Bolbot, P.H., Alderman, J.C., IEEE Trans. Electron Dev. ED-33.354 (1986).Google Scholar
34 Whitfield, J.D., Burnham, M.E., Varker, C.J., Wilson, S.R., presented at the IEEE SOS/SOI Technology Workshop, Captiva, FL, 1986.Google Scholar
35 Edwards, S.P., Yallup, KJ., De Meyer, K., presented at the IEEE SOS/SOI Technology Workshop, Durango, CO, 1987; P. Paelinck, O. Vancauwenberghe, F. Van de Wiele, IEEE SOS/SOI Technology Workshop ; S. Veeraraghavan ang J.G. Fossum, IEEE SOS/SOI Technology Workshop.Google Scholar
36 Colinge, J.P. and Kamins, T.I., presented at the IEEE SOS/SOI Technology, Durango, CO, 1987; T.W. MacElwee and ID. Calder. IEEE SOS/SOI Technology Workshop.Google Scholar
37 Colinge, J.P., IEEE Trans. Electron Devices ED-34,2173 (1987).CrossRefGoogle Scholar
38 Haddara, H. and Ghibaudo, G., presented at the European Solid State Device Res. Conf., Cambridge, UK, 1986).Google Scholar
39 Elewa, T., Haddara, H., Cristoloveanu, S., in The Physics and Technology of Amorphous SiOz. Les Arcs, France, 1987.Google Scholar
40 Haddara, H., Elewa, T., Cristoloveanu, S., IEEE Electron Device Lett. EDL-9 (1988).Google Scholar
41 Vu, D.P. and Pfister, J.C., Appl. Phys. Lett. 48,50 (1986).CrossRefGoogle Scholar
42 Wouters, D.J., Tack, M.R., Mertens, P.W., Maes, H.E., Claeys, C.L., presented at the 17th European Solid State Device Research Conf., Bologna, Italy, 1987, p.299.Google Scholar
43 Elewa, T., Haddara, H., Cristoloveanu, S., presented at the SOI Consortium, London, 1987.Google Scholar
44 Zerbst, M.,Z.Angew.Phys. 22,30(1966).Google Scholar
45 Vu, D.P. and Pfister, J.C., Appl. Phys. Lett. 47,950 (1985).Google Scholar
46 Cristoloveanu, S., Chovet, A., Kamarinos, G., Solid State Electron. 21,1563 (1978).Google Scholar
47 Chovet, A., Boukriss, B., Elewa, T., Cristoloveanu, S., presented at the 9th Conf. “Noise in Physical Systems”, Montreal, 1987, in press.Google Scholar
48 Reimbold, G., IEEE Trans. Electron Devices, ED-31,1190 (1984).CrossRefGoogle Scholar
49 White, A.E., Shart, K.T., Batstone, J.L., Jacobson, D.C., Poate, J.M., West, K.W., Appl. Phys. Lett. 50, 19 (1987).Google Scholar
50 Nakashima, S., Maeda, Y., Akiya, M., IEEE Trans. Electron Devices ED-33, 126(1986).Google Scholar
51 Mao, B.Y., Chang, P.H., Lam, H.W., Shen, B.W., Keenan, J.A., Appl. Phys. Lett. 48, 794 (1986) ; P.H. Chang and B.Y. Mao,IEEE Trans. Electron Devices 50,152 (1987).Google Scholar
52 Colinge, J.P. and Chiang, S.Y., IEEE Electron Device Lett. EDL-7, 697(1986).CrossRefGoogle Scholar
53 van Ommen, A.H., Koek, B.H., Viegers, M.P.A., Appli. Phys. Lett. 49,1062 (1986).CrossRefGoogle Scholar
54 Davis, J.R., Robinson, A., Reeson, KJ., Hemment, P.L.F., presented at the IEEE SOS/SOI Technology Workshop, Durango, CO, 1987.Google Scholar