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Electrical Contact Resistance of Electroless Nickel to Nanocrystalline Silicon and the Fabrication of a Thermoelectric Generator

Published online by Cambridge University Press:  17 July 2013

V. Kessler ,
M. Dehnen ,
R. Chavez ,
M. Engenhorst ,
J. Stoetzel ,
N. Petermann ,
K. Hesse ,
T. Huelser ,
M. Spree  and
G. Schierning
...Show all authors
V. Kessler
Affiliation:
Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
M. Dehnen
Affiliation:
Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
R. Chavez
Affiliation:
Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
M. Engenhorst
Affiliation:
Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
J. Stoetzel
Affiliation:
Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
N. Petermann
Affiliation:
Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
K. Hesse
Affiliation:
GSI - Gesellschaft für Schweißtechnik International mbH, Niederlassung SLV Duisburg, 47057 Duisburg, Germany
T. Huelser
Affiliation:
Institute of Energy and Environmental Technology e.V. (IUTA), 47229 Duisburg, Germany
M. Spree
Affiliation:
Institute of Energy and Environmental Technology e.V. (IUTA), 47229 Duisburg, Germany
G. Schierning
Affiliation:
Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
R. Schmechel
Affiliation:
Faculty of Engineering and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
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Abstract

We present the fabrication of a high-temperature stable thermoelectric generator based on nanocrystalline silicon. Highly doped silicon nanoparticles were sintered by a current activated sintering technique to get nanocrystalline bulk silicon. The metalization of silicon was realized by (electro-)chemical plating and the specific electrical contact resistance ρc of the semiconductor-metal interface was measured by a transfer length method. Values as low as $\rho _C < 1 \cdot 10^{ - 6} \,\Omega cm^2 $ were measured. The metalized nanocrystalline silicon legs were sintered to metalized ceramic substrates using a silver-based sinter paste. The device figure of merit of the thermoelectric generator was determined by a Harman measurement with a maximum ZT of approximately 0.13 at 600 °C.

Keywords

thermoelectricityelectrodepositionnanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1553: Symposium T – Electrical Contacts to Nanomaterials and Nanodevices , 2013 , mrss13-1553-t03-08
Copyright
Copyright © Materials Research Society 2013 

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References

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