Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-02T23:27:41.515Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical and Optical Properties of Zinc Oxide Thin Films and Heavily Aluminum-doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy

Published online by Cambridge University Press:  11 February 2011

Takeshi Ohgaki ,
Yuji Kawamura ,
Naoki Ohashi ,
Hirofumi Kakemoto ,
Satoshi Wada ,
Yutaka Adachi ,
Hajime Haneda  and
Takaaki Tsurumi
Takeshi Ohgaki
Affiliation:
Advanced Materials Laboratory National Institute for Materials Science, 1–1 Namiki, Tsukuba, Ibaraki 305–0047, Japan.
Yuji Kawamura
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro-ku, Tokyo 152–8552, JAPAN.
Naoki Ohashi
Affiliation:
Advanced Materials Laboratory National Institute for Materials Science, 1–1 Namiki, Tsukuba, Ibaraki 305–0047, Japan.
Hirofumi Kakemoto
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro-ku, Tokyo 152–8552, JAPAN.
Satoshi Wada
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro-ku, Tokyo 152–8552, JAPAN.
Yutaka Adachi
Affiliation:
Advanced Materials Laboratory National Institute for Materials Science, 1–1 Namiki, Tsukuba, Ibaraki 305–0047, Japan.
Hajime Haneda
Affiliation:
Advanced Materials Laboratory National Institute for Materials Science, 1–1 Namiki, Tsukuba, Ibaraki 305–0047, Japan.
Takaaki Tsurumi
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 2–12–1 Ookayama, Meguro-ku, Tokyo 152–8552, JAPAN.
Get access

Abstract

ZnO (ZO) and Aluminum (Al) doped ZnO (AZO) films were grown on sapphire substrate via oxygen radical assisted molecular beam epitaxy (MBE) technique. The results of XRD measurement and temperature dependent Hall measurement confirmed that the AZO films were typically highly degenerate semiconductor with good crystallinity. The resistivity of these films were closed to the theoretical lower limit. The optical properties of these films were investigated by photoluminescence (PL) spectra and absorption spectra. Strong band-edge emission was observed in the AZO films with good crystallinity in spite of high carrier concentration more than 1020 cm-3. A sift of absorption edge to higher energy side and a gradual increase of the absorption was observed for the AZO film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.1
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Minegishi, K., Koiwai, Y., Kikuchi, Y. and Yano, K., Jpn. J. Appl. Phys. 36, L1453 (1997).Google Scholar
[2] Segawa, Y., Ohtomo, A., Kawasaki, M., Koinuma, H., Tang, Z. K., Yu, P., and Wong, G. K. L., Phys. Status Solidi B 202, 669 (1997).Google Scholar
[3] Ohtomo, A., Tamura, K., Saikusa, K., Takahashi, K., Makino, T., Segawa, Y., Koinuma, H., and Kawasaki, M., Appl. Phys. Lett. 75, 2635 (1999).Google Scholar
[4] Nakahara, K., Tanabe, T., Takasu, H., Fons, P., Iwata, K., Yamada, A., Matsubara, K., Hunger, R. and Niki, S., Jpn. J. Appl. Phys. 40, 250 (2001).Google Scholar
[5] Ohashi, N., Sekiguchi, T., Aoyama, K., Ohgaki, T., Terada, Y., Sakaguchi, I., Tsurumi, T. and Haneda, H., J. Appl. Phys. 91, 3658 (2002).Google Scholar
[6] Iwata, K., Fons, P., Yamada, A., Matsubara, K. and Niki, S., J. Cryst. Growth. 209, 526 (2000).Google Scholar
[7] Bellingham, J. R., Phillips, W. A. and Adkins, C. J.: J. Mater. Sci. Lett. 11, 263 (1992).Google Scholar
[8] Roth, A. P., Webb, J. B. and Williams, D. F., Solid State Commun. 39, 1269 (1981).Google Scholar