Article contents
Electrcn Trapping/Detrapping in Thin SiO2 Under High Fields
Published online by Cambridge University Press: 22 February 2011
Abstract
A constant alternating current stressing technique is employed to study the electron trapping and detrapping cha~acteristics within a layer of thin silicon dioxide (˜.100 Å). A two-charge centroid model is proposed to explain the trapping/detrapping phenomena under high electric fields. The oxide breakdown mechanism induced by the local field of trapped electrons is also discussed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1985
References
- 2
- Cited by