Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-28T03:21:12.433Z Has data issue: false hasContentIssue false
  • English
  • Français

Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

Published online by Cambridge University Press:  21 April 2011

Nikolas Zographos ,
Christoph Zechner  and
Ibrahim Avci
Nikolas Zographos
Affiliation:
Synopsys Switzerland LLC, Zurich, CH-8050, Switzerland
Christoph Zechner
Affiliation:
Synopsys Switzerland LLC, Zurich, CH-8050, Switzerland
Ibrahim Avci
Affiliation:
Synopsys, Inc., Mountain View, CA, 94043
Get access

Abstract

The simulation of deep-submicron silicon-device manufacturing processes relies on predictive models for extended defect clusters. For submicroscopic interstitial clusters and {311} defects, an efficient and highly accurate model for process simulation has been developed and calibrated recently [1]. This model combines equations for three small interstitial clusters and two moments for {311} defects. In this work, we extend this model to include dislocation loops and to reproduce a greatly increased range of experimental data, including thermal annealing of end-of-range defects after amorphizing implants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F10-01
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zechner, C., Zographos, N., Matveev, D., Erlebach, A., Mat. Sci. Eng. B 124–125 (2005).Google Scholar
2. Claverie, A., Cristiano, F., Colombeau, B., Scheid, E., Mauduit, B. De, Proceedings of IIT, 538 (2002).Google Scholar
3. Boninelli, S., Cherkashin, N., Claverie, A., Cristiano, F., Appl. Phys. Lett. 89, 161904 (2006).Google Scholar
4. Stiebel, D., Pichler, P., Cowern, N.E.B., Appl. Phys. Lett. 79, 2654 (2001).Google Scholar
5. Gencer, A.H., Dunham, S.T., J. Appl. Phys. 91, 5 (2002).Google Scholar
6. Li, J., Jones, K.S., Appl. Phys. Lett. 73, 3748 (1998).Google Scholar
7. Huang, R., Dutton, R., J. Appl. Phys. 74, 5821 (1993).Google Scholar
8. Avci, I., Law, M.E., Kuryliw, E., Saavedra, A.F., Jones, K.S., J. Appl. Phys. 95, 2452 (2004)Google Scholar
9. Foell, H., Carter, C.B., Phil. Mag. A40 (4), 497 (1979).Google Scholar
10. Cowern, N.E.B., Mannino, G., Stolk, P.A., Roozeboom, F., Huizing, H.G.A., Berkum, J.G.M. Can, Phys. Rev. Lett. 82, 4460 (1999).Google Scholar
11. Cherkashin, N., Calvo, P., Cristiano, F., Mauduit, B. De, Claverie, A., Mat. Res. Soc. Symp. Proc. 810 C3.7.1. (2004).Google Scholar
12. Stolk, P., Gossmann, H.-J., Eaglesham, D.J., Jacobson, D.C., Rafferty, C.S., Gilmer, G.H., Jaraiz, M., Poate, J.M., Luftman, H.S., Haynes, T.E., J. Appl. Phys. 81, 6031 (1997)Google Scholar
13. Cristiano, F., Cherkashin, N., Hebras, X., Calvo, P., Lamrani, Y., Scheid, E., Mauduit, B. De, Colombeau, C, Lerch, W., Paul, S., Claverie, A., Nucl. Inst. Meth. Phys. Res. B 216, 46 (2004).Google Scholar
14. Law, M.E, Jones, K.S., Proceedings of IEDM, 21.4.1. (2000)Google Scholar
15. Saleh, H., Law, M.E., Bharatan, S., Jones, K.S., Krishnamoorty, V., Buyuklimanli, T., Appl. Phys. Lett. 77, 112 (2000).Google Scholar
16. Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J., Poate, J.M., Appl. Phys. Lett. 65, 2305 (1994).Google Scholar
17. Calvo, P., Claverie, A., Cherkashin, N., Colombeau, B., Lamrani, Y., Mauduit, B. De, Cristiano, F., Nucl. Inst. Meth. Phys. Res. B 216, 173 (2004).Google Scholar
18. Lamrani, Y., Cristiano, F., Colombeau, B., Scheid, E., Calvo, P., Schaefer, H., Claverie, A., Nucl. Inst. Meth. Phys. Res. B 216, 281 (2004).Google Scholar
19. Bonafos, C., Mathiot, D., Claverie, A., J. Appl. Phys. 83, 3008 (1998).Google Scholar
20. Pan, G.Z., Tu, K.N., Prussin, A., J. Appl. Phys. 81, 78 (1997).Google Scholar
21. Robertson, L.S., Jones, K.S., Rubin, L.M, Jackson, J., J. Appl. Phys. 87, 2910 (1998).Google Scholar
22. Liu, J., Law, M.E., Jones, K.S., Solid-State Elec. 38, 7, 1305 (1995).Google Scholar
23. Sentaurus Process User Guide, Version Z-2007.03, Synopsys Inc., Mountain View, CA (2007).Google Scholar