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Efficacy of Damage Annealing in Advanced Ultra-Shallow Junction Processing

Published online by Cambridge University Press:  01 February 2011

Paul J Timans ,
Yao Zhi Hu ,
Jeff Gelpey ,
Steve McCoy ,
Wilfried Lerch ,
Silke Paul ,
Detlef Bolze  and
Hamid Kheyrandish
Paul J Timans
Affiliation:
[email protected], Mattson Technology, Inc., 47131 Bayside Parkway, Fremont, CA, 94538, United States
Yao Zhi Hu
Affiliation:
[email protected], Mattson Technology, Inc., Fremont, CA, 94538, United States
Jeff Gelpey
Affiliation:
[email protected], Mattson Technology Canada, Inc., Vancouver, V6P 6T7, Canada
Steve McCoy
Affiliation:
[email protected], Mattson Technology Canada, Inc., Vancouver, V6P 6T7, Canada
Wilfried Lerch
Affiliation:
[email protected], Mattson Thermal Products GmbH, Dornstadt, 89160, Germany
Silke Paul
Affiliation:
[email protected], Mattson Thermal Products GmbH, Dornstadt, 89160, Germany
Detlef Bolze
Affiliation:
[email protected], IHP, Frankfurt (Oder), 15236, Germany
Hamid Kheyrandish
Affiliation:
[email protected], CSMA Ltd., Stoke-on-Trent, ST4 7LQ, United Kingdom
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Abstract

Low thermal budget annealing approaches, such as millisecond annealing or solid-phase epitaxy (SPE) of amorphized silicon, electrically activate implanted dopants while minimizing diffusion. However, it is also important to anneal damage to the crystal lattice in order to minimize junction leakage. Annealing experiments were performed on low-energy B implants into both crystalline silicon and into wafers pre-amorphized by Ge implantation. Some wafers also received As implants for halo-style doping, and in some cases the halo implants were pre-annealed at 1050°C before the B-doping. The B-implants were annealed by either SPE at 650°C, spike annealing at 1050°C, or by millisecond annealing with flash-assisted RTP™ (fRTP™) at temperatures between 1250°C and 1350°C. Residual damage was characterized by photoluminescence and non-contact junction leakage current measurements, which permit rapid assessment of damage removal efficacy. Damage from the heavy ions used for the halo and pre-amorphization implants dominates the defect annealing behaviour. The halo doping is the critical factor in determining junction leakage current. Millisecond annealing at high temperatures helps to minimize residual damage while limiting diffusion.

Keywords

annealingion-implantationSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E04-03
Copyright
Copyright © Materials Research Society 2008

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