Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-24T16:42:05.830Z Has data issue: false hasContentIssue false

Effects of various annealing temperature on carbon nanotubes for N2 detection

Published online by Cambridge University Press:  01 February 2011

Chien-Sheng Huang
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Bohr-Ran Huang
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Yung-Huang Jang
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Chih-Fu Hsieh
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Chia-Ching Wu
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Min-Chao Chen
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Kun-Lin Yang
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Get access

Abstract

The vertically aligned carbon nanotubes (CNTs) deposited by microwave plasma-enhanced chemical vapor deposition (MPCVD) were utilized as resistive gas sensors.

The carbon nanotubes were annealed between 200 to 800°C under N2 flow (500 sccm) for 15 minute, respectively. After that, the carbon nanotubes were exposed to an N2 filling and pumping environment. Upon exposure to N2 the electrical resistance of vertically aligned carbon nanotubes was found to increase. It was found that the N2 absorption of unannealed carbon nanotubes was reversible, whereas which of annealing ones was not. However, the sensitivity of the N2 absorption on carbon nanotubes was improved after annealing. From the Raman spectra, the ID/IG ratio of carbon nanotubes also decreased after annealing, indicating that more graphenes were formed by the annealing process. Furthermore, from X-ray photoelectron spectroscopy (XPS), it was observed that the ratio of the oxygen to carbon (O/C) signal intensity increased from 0.094 to 3.943 as the annealing temperature increased. As a consequence, it was suggested that the surface of carbon nanotubes was oxygenated and the absorption of N2 changed from physisorption to chemisorption.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Iijima, S., Nature 354 (1991) 56.Google Scholar
[2] de Heer, W. A., Chatelain, A., and Ugarte, D., Science 270 (1995) 1179.Google Scholar
[3] Hafner, J., Cheung, C., Lieber, C., Nature 398 (1999) 761.Google Scholar
[4] Liu, C., Fan, Y.Y., Liu, M., Cong, H.T., Cheng, H.M., Dresselhaus, M.S., Science 286 (1999) 1127.Google Scholar
[5] Tans, S.J., Devoret, M.H., Dai, H., Thess, A., Smalley, R.E., Geerligs, L.J., Dekker, C., Nature 386 (1997) 474.Google Scholar
[6] Rueckes, T., Kim, K., Joselevich, E., Tseng, G. Y., Cheung, C., and Lieber, C. M., Science 289 (2000) 94.Google Scholar
[7] Wei, Bee-Yu, Hsu, Ming-Chih, Su, Pi-Guey, Lin, Hong-Ming, Wu, Ren-Jang, Lai, Hong-Jen, Sensors and Actuators B 101 (2004) 81.Google Scholar
[8] Valentini, L., Cantalini, C., Armentano, I., Kenny, J.M., Lozzi, L., Santucci, S., Diamond and Related Materials 13 (2004) 1301.Google Scholar
[9] Wang, S.G., Zhang, Qing, Yang, D.J., Sellin, P.J., Zhong, G.F., Diamond and Related Materials 13 (2004) 1327.Google Scholar
[10] Saito, R., Dresselhaus, G., M.S. Dresselhaus, Imperial College Press, London (1998).Google Scholar
[11] Tan, P.H., Hu, C.Y., Li, F., Bai, S., Hou, P.X., Cheng, H.M., Carbon 40 (2002) 1131.Google Scholar
[12] Corrias, M., Serp, Ph., Kalck, Ph., Dechambre, G., Lacout, J.L., Castiglioni, C., Kihn, Y., Carbon 41 (2003) 2361.Google Scholar
[13] Zhao, X, Ando, Y. Jpn J Appl Phys. 37 (1998) 4846.Google Scholar
[14] Gao, J.S., Umeda, K., Uchino, K., Nakashima, H., Muraoka, K., Materials Science and Engineering A 352 (2003) 308.Google Scholar
[15] Varghese, O. K., Kichambare, P. D., Gong, D., Ong, K. G., Dickey, E. C., Grimes, C. A., Sens. Actuators B 81 (2001) 32.Google Scholar
[16] Goldoni, A., Petaccia, L., Lizzit, S., Larciprete, R., ELETTRA Highlights, (20022003) 57.Google Scholar
[17] Tharigen, T., Lippold, G., Riede, V., Lorenz, M., Koivusaari, K. J., Lorenz, D., Mosch, S., Grau, P, Hesse, R., Thin Solid Film, 348 (1999) 103.Google Scholar
[18] Moncoffre, N., Hollinger, G., Jaffrezic, H., Marest, G., Tousset, J.. Nuclear Instruments and Methods in Physics Research B 7/8, (1985) 177.Google Scholar
[19] Coutures, J.P., Erre, R., Massiot, D., Lanron, C., Billard, D., Peraudeau, G., Radiation Effects 98 (1986) 83.Google Scholar
[20] Goldoni, A., Larciprete, R., Petaccia, L., Lizzit, S., J. Am. Chem. Soc. 125 (2003) 11329.Google Scholar
[21] Villalpando-Pàez, F., Romero, A.H., Muñoz-Sandoval, E., Martínez, L.M., Terrones, H., Terrones, M., Chemical Physics Letters 386 (2004) 137.Google Scholar