Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-28T04:05:55.723Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Substrate Materials on the Electrical Behavior of Pd/AlN/Semiconductor Based Hydrogen Sensors

Published online by Cambridge University Press:  01 February 2011

Md. H. Rahman ,
L. Zhang ,
L. Rimai ,
R.J. Baird ,
R. Naik ,
K.Y.S. Ng ,
G. Auner  and
G. Newaz
Md. H. Rahman
Affiliation:
Department of Chemical Engineering and Materials Science
L. Zhang
Affiliation:
Department of Electrical and Computer Engineering
L. Rimai
Affiliation:
Department of Electrical and Computer Engineering
R.J. Baird
Affiliation:
Department of Electrical and Computer Engineering
R. Naik
Affiliation:
Department of Physics and Astronomy
K.Y.S. Ng
Affiliation:
Department of Chemical Engineering and Materials Science
G. Auner
Affiliation:
Department of Electrical and Computer Engineering
G. Newaz
Affiliation:
Department of Mechanical Engineering. Wayne State University, Detroit, MI-48202
Get access

Abstract

C-plane textured wurtzite AlN films deposited on both, 3C and 6H SiC as well as Si, have been employed in Pd/AlN/Semiconductor diode Hydrogen sensor structures. The SiC based devices behave as rectifiers and do not show the bias dependent capacitance expected for an MIS structure when reverse biased. The Si based devices, albeit exhibiting rectifying characteristics do show the expected dependence of capacitance on reverse bias, with typical depletion and inversion regions. The SiC based devices show the sensor response as change in bias voltage at constant forward current but the Si based device showed no response in this mode of operation albeit it did respond well in terms of the Hydrogen induces shift of the depletion capacitance vs. bias characteristic. As the AlN itself has the same structure in all cases, the differences in both, electrical characteristics and sensing response mechanism are related to differences in the AlN/Substrate heterojunction resulting from differences in the electronic band structure of the substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J18.12
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 , Lundstrom, Shivaraman, M.S., Svensson, C., Lundkvist, L., Hydrogen sensitive MOS field-effect transistor, Appl. Phys. Lett. 26 (1975) 55–57.Google Scholar
2 Samman, A., Gebremariam, S., Rimai, L., Zhang, X., Hangas, J., Auner, G.W. Sensors and Actuators B, 63 (2000), 91–102.Google Scholar
3 Samman, A., Ph.D. Dissertation, Wayne State University, 1997 Google Scholar
4 Serina, F., Ng, K.Y.S., Huang, C., Auner, G.W., Rimai, L., and Naik, R., Appl. Phys. Lett. 79, 3350–3352 (2001).Google Scholar
5 Rahman, M.H., McCullen, E.F., Rimai, L., Newaz, G., Ng, S., Baird, R., Naik, R., and Auner, G., Saturation and flow rate effects on the response of a Pd/AlN/SiC hydrogen sensor, Mat. Res. Soc. Symp.:J, Vol: 815 (2004).Google Scholar
6 Rimai, L., McCullen, E.F., Rahman, M.H., Linfeng, Z., Thakur, J.S., Naik, R., Newaz, G., Ng, S., Baird, R., and Auner, G.. The electrical behavior of Pd/AlN/Semiconductor thin film hydrogen sensing structures, Mat. Res. Soc. Symp.:J, Vol: 815, (2004).Google Scholar
7 Samman, A., Gebremariam, S., Rimai, L., Zhang, X., Hangas, J., and Auner, G. W. J. Appl. Phys. 87, 3101 (2000).Google Scholar
8 McCullen, E. F., Prakasam, H. E., Mo, Wenjun, Naik, R., Ng, K. Y. S., Rimai, L., and Auner, G. W., J. Appl. Phys. Vol 93, pg 5757 (2003)Google Scholar
9 Zhang, Linfeng 1, McCullen, Erik F. 1, Rahman, Md H. 2, Thakur, Jagdish S. 1, Rimai, Lajos 1, Baird, Ron J. 1, Naik, Ratna 3, Golam Newaz4, Auner, Gregory W. 1, Ng, K.Y. Simon 2. Submitted to Sensors and Actuators.Google Scholar