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Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

J. D. Song ,
Y. M. Park ,
J. C. Shin ,
J. G. Lim ,
Y. J. Park ,
W. J. Choi ,
I. K. Han ,
W. J. Cho ,
J. I. Lee  and
H. S. Kim
...Show all authors
J. D. Song
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
Y. M. Park
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
J. C. Shin
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
J. G. Lim
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
Y. J. Park
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
W. J. Choi
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
I. K. Han
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
W. J. Cho
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
J. I. Lee
Affiliation:
Nano-device Research Center, KIST, Seoul 136–791, Korea
H. S. Kim
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Korea
C. G. Park
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790–784, Korea
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Abstract

The influence of growth sequence on optical and structural properties of InAs/GaAs quantum dots (QD) grown by atomic layer epitaxy was investigated systematically. It is found that growth interruption (GI) after In is more effective than non-GI after In in reducing the density of coalescent dots, and reducing the dot width distribution of the QDs. Meanwhile, dot densities are approximately doubled by non-GI after In. GI after As reduces dot height distribution compared with non-GI after As. Generally, GI after In plays a more critical role than GI after As does in formation of the QDs. The sample grown with In/GI/As/GI sequence shows the lowest 300 K-photoluminescence (PL) linewidth (∼30 meV), high PL peak separation between ground and 1st excited level (∼80 meV). From the result, it is known that In/GI/As/GI is the favorable growth sequence among the sample sets. Temperature dependence of PL linewidth shows that the In/GI/As/GI sample is insensitive to cryostat temperature and it is attributed to weak wetting effect. Thinner wetting layers shown in a cross-sectional TEM image supports this.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 794: Symposium T – Self-Organized Processes in Semiconductor Heteroepitaxy , 2003 , T3.26
Copyright
Copyright © Materials Research Society 2004

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References

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