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Effects of CuIn0,5Ga0,5Se2 growth by isothermal and bithermal Cu-Poor/Rich/Poor sequence on solar cells properties

Published online by Cambridge University Press:  31 January 2011

Hakim Marko
Affiliation:
[email protected], IMN, Nantes University - CNRS, Nantes, France
Adam Hultqvist
Affiliation:
[email protected], Ångström Solar Center, Uppsala University, Uppsala, Sweden
Charlotte Platzer-Björkman
Affiliation:
[email protected], Ångström Solar Center, Uppsala University, Uppsala, Sweden
Sébastien Noël
Affiliation:
[email protected], CEA, Liten, LCRE, Grenoble, France
John Kessler
Affiliation:
[email protected], IMN, Nantes University - CNRS, Nantes, France
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Abstract

Co-evaporated CuIn0,5Ga0,5Se2 thin film solar cells were grown using a sequential Cu-Poor/Rich/Poor process (CUPRO). During the growth process, the substrate temperature was either kept constant at 570 °C (iso-CUPRO) or decreased during the first step to either 360 or 430 or 500 °C (bi-CUPRO). According to atomic force microscopy (AFM) measurements, the lower the temperature is in the first step the smoother the final CIGS surface becomes. By decreasing the first step temperature, cross-section scanning electron microscopy (SEM) and θ-2θ x-ray diffraction (XRD) do not reveal clearly any important changes of morphology and crystallographic preferred orientation. SLG/Mo/CIGS/Buffer layer/i-ZnO/ZnO:Al/grid(Ni/Al/Ni) solar cells with either a chemical bath deposited CdS or an atomic layer deposited Zn(O,S) buffer layer were fabricated. For both buffer layers, the bi-CUPRO processes lead to higher efficiencies. Besides, using Zn(O,S), the electronic collection was improved for the infrared spectrum as well as for the ultraviolet spectrum. This resulted in efficiencies close to 14,5% for the Zn(O,S) cells.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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