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Effects of argon to oxygen ratio and post annealing on R.F. sputtered SnO2 thin film for ethylene gas detection

Published online by Cambridge University Press:  17 January 2011

Hosang Ahn ,
Seon-Bae Kim  and
Dong-Joo Kim
Hosang Ahn
Affiliation:
Materials Research and Education Center, Auburn University, Auburn AL 36849 USA
Seon-Bae Kim
Affiliation:
Materials Research and Education Center, Auburn University, Auburn AL 36849 USA
Dong-Joo Kim
Affiliation:
Materials Research and Education Center, Auburn University, Auburn AL 36849 USA
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Abstract

Optimum processing conditions for fabricating SnO2 thin films were investigated to detect low ppm levels of ethylene gas for future on-field gas sensor applications. Different argon-to-oxygen ratios during R.F. sputtering were attempted to find the optimum gas ratio in depositing SnO2 thin film. Post-annealing was performed at 650°C to investigate the influence of film property change on ethylene sensing property of sensor. As-deposited and post-annealed films prepared under four different argon-to-oxygen ratios were studied by SEM, XRD, and sensitivity measurement. It was found that the stoichiometry and crystallinity of SnO2 films determined by post annealing was more influential than those by the argon to oxygen ratio during R.F sputtering on ethylene gas detection. An ethylene gas-sensing mechanism on R.F. sputtered SnO2 thin films for the design of processing conditions is proposed.

Keywords

sputteringthin filmSn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1292: Symposium K – Oxide Nanoelectronics , 2011 , mrsf10-1292-k12-34
Copyright
Copyright © Materials Research Society 2011

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References

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