Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-08T00:06:39.322Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Yb Diffusion Barriers on the Properties of In/ n-Hg1−xCdxTe Contacts

Published online by Cambridge University Press:  25 February 2011

Patrick W. Leech ,
Geoffrey K. Reeves ,
Yuan H. Li  and
Martyn H. Kibel
Patrick W. Leech
Affiliation:
Telecom Australia Research Laboratories, Clayton, 3168, Victoria, Australia.
Geoffrey K. Reeves
Affiliation:
Royal Melbourne Institue of Technology, Melbourne, 3001, Victoria, Australia.
Yuan H. Li
Affiliation:
Royal Melbourne Institue of Technology, Melbourne, 3001, Victoria, Australia.
Martyn H. Kibel
Affiliation:
Telecom Australia Research Laboratories, Clayton, 3168, Victoria, Australia.
Get access

Abstract

The effect of incorporating a Yb diffusion barrier on the electrical and interfacial properties of In/Hg1−xCdxTe contacts has been examined. Measurements of the specific contact resistance, pc, as a function of Yb layer thickness were performed for a series of semiconductor compositions from x = 0.32 to 0.65. Large changes in pc were evident only at x 0.56 and above a Yb thickness of 2.5nm to 6.0nm, this critical level of layer thickness decreasing with x-value. Analytical examination of the interfaces by Auger electron spectroscopy, secondary ion mass spectroscopy and Rutherford backscattering spectrometry has shown a progressive reduction in the extent of In indiffusion with increasing thickness of the Yb interlayer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 329
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Johnson, E.S. and Schmit, J.T., J. Electronic Mats., 6, 25, (1977).CrossRefGoogle Scholar
2. Margalit, S. and Nemirovsky, Y., J. Electrochem Soc, 128, 2619, (1980).Google Scholar
3. Davis, G.D., J. Vac. Sci. Technol., A6 (3), 1939, (1988).Google Scholar
4. Raisanen, A., Peterman, D.J., Wall, A., Chang, S., Haugstad, G., Yu, X. and Franciosi, A., Solid State Communications, 71, 585, (1989).Google Scholar
5. Leech, P.W., Gwynn, P.J. and Kibel, M.H., App. Surf. Sci., 37, 291, (1989).CrossRefGoogle Scholar
6. Leech, P.W., Reeves, G.K. and Kibel, M.H., in Long-Wavelength Semiconductor Devices, Materials and Processes, edited by Katz, A., Biefield, R.M., Gunshor, R.L. and Malik, R.J. (Mater. Res. Soc. Proc. 216, Boston, MA (1990), pp.155–160.Google Scholar
7. Reeves, G.K. and Harrison, H.B., IEEE Electron Device Lett., EDL-3, 111, (1982).CrossRefGoogle Scholar
8. Leech, P.W. and Reeves, G.K., J. Vac. Sci. Technol., Jan/Feb 1992, In Press.Google Scholar
9. Raisanen, A., Haugsted, G., Yu, X. and Franciosi, A., J. App. Phys., 70, (6), 3115, (1991).Google Scholar
10. Spicer, W.E., Friedman, D.J. and Carey, G.P., J. Vac. Sci. Technol., A6, 2746, (1988).Google Scholar
11. Braithwaite, R.E., Scott, C.G. and Mullin, J.B., Solid State Electronics, 23, 1091, (1980).Google Scholar