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The Effect of The Zn Interstitial Defect on the Performance of p/n InP Solar Cells

Published online by Cambridge University Press:  10 February 2011

R. W. Hoffman Jr ,
N. S. Fatemi ,
V. G. Weizer ,
P. Jenkins ,
M. A. Stan ,
S. A. Ringel ,
R. M. Sieg ,
D. A. Scheiman ,
D. M. Wilt  and
D. J. Brinker
R. W. Hoffman Jr
Affiliation:
Essential Research, Inc., Cleveland, OH 44135
N. S. Fatemi
Affiliation:
Essential Research, Inc., Cleveland, OH 44135
V. G. Weizer
Affiliation:
Essential Research, Inc., Cleveland, OH 44135
P. Jenkins
Affiliation:
Essential Research, Inc., Cleveland, OH 44135
M. A. Stan
Affiliation:
Essential Research, Inc., Cleveland, OH 44135
S. A. Ringel
Affiliation:
The Ohio State University, Columbus, OH 43210
R. M. Sieg
Affiliation:
The Ohio State University, Columbus, OH 43210
D. A. Scheiman
Affiliation:
NYMA Setar, Cleveland, OH 44135
D. M. Wilt
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
D. J. Brinker
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
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Abstract

The bandgap of InP is near ideal for the high theoretical conversion efficiency of the air mass zero (AM0) light spectrum experienced in space. This combined with the well known radiation resistance makes InP an ideal candidate for space solar cell use. The p/n configuration has several advantages over the n/p configuration, however, the conversion efficiency of p/n InP cells has been low compared to the n/p configuration, mostly do to poor performance of the Zn doped emitter. We have recently achieved a 17.6% AMO conversion efficiency for a p/n InP cell on an InP substrate and have achieved this record efficiency through understanding of the role of Zn interstitial defects and the hydrogen interactions with these defects. The effect of the Zn defect on device performance will be described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 235
Copyright
Copyright © Materials Research Society 1998

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References

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