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The Effect of Surface Finish on the Dislocation Density in Sublimation grown SiC Layers

Published online by Cambridge University Press:  21 March 2011

E. K. Sanchez ,
J. Liu ,
W. M. Vetter ,
M. Dudley ,
R. Bertke ,
W. C. Mitchel  and
M. Skowronski
E. K. Sanchez
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213, USA.
J. Liu
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213, USA.
W. M. Vetter
Affiliation:
Department of Materials Science & Engineering, State University of New York, Stony Brook, NY 11794, USA.
M. Dudley
Affiliation:
Department of Materials Science & Engineering, State University of New York, Stony Brook, NY 11794, USA.
R. Bertke
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLP, Wright Patterson AFB, OH 45433
W. C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, AFRL/MLP, Wright Patterson AFB, OH 45433
M. Skowronski
Affiliation:
Department of Materials Science & Engineering, Carnegie Mellon University, 5000 Forbes Avenue, Pittsburgh, PA 15213, USA.
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Abstract

The effect of the seed surface finish on the dislocation density of sublimation grown silicon carbide was investigated. Growth on seeds that were polished down to 1 μm diamond paste resulted in the nucleation of threading screw dislocations in a density of 106 cm−2 and threading edge dislocations in densities of 107 cm−2. Following the mechanical polish of the seeds with a hydrogen etch or chemo-mechanical polish prior to growth resulted in the screw dislocation density decreasing by four orders of magnitude and the threading edge dislocation density dropping two orders of magnitude. Using the dislocations density and the hydrogen etch rate, the depth of damage in mechanically damaged seeds was determined to be between 400 and 1000 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H1.3
Copyright
Copyright © Materials Research Society 2001

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References

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