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Effect of Si Doping on The Structure of Gan

Published online by Cambridge University Press:  15 February 2011

Zuzanna Liliental-Weber ,
S. Ruvimov ,
T. Suski ,
J. W. Ager III ,
W. Swider ,
Y. Chen ,
Ch. Kisielowski ,
J. Washburn ,
I. Akasaki  and
H. Amano
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Zuzanna Liliental-Weber
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory 62/203 Berkeley, CA 94720
S. Ruvimov
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory 62/203 Berkeley, CA 94720
T. Suski
Affiliation:
High Pressure Research Center, UNIPRESS, Polish Academy of Sciences, Warsaw, Poland
J. W. Ager III
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory 62/203 Berkeley, CA 94720
W. Swider
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory 62/203 Berkeley, CA 94720
Y. Chen
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory 62/203 Berkeley, CA 94720
Ch. Kisielowski
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory 62/203 Berkeley, CA 94720
J. Washburn
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory 62/203 Berkeley, CA 94720
I. Akasaki
Affiliation:
Meijo University, Nagoya, Japan
H. Amano
Affiliation:
Meijo University, Nagoya, Japan
C. Kuo
Affiliation:
Materials Sciences Division, E.O. Lawrence Berkeley National Laboratory 62/203 Berkeley, CA 94720
W. Imler
Affiliation:
Optoelectr. Division, Hewlett Packard, San Jose, CA
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Abstract

The influence of Si doping on the structure of GaN grown by metal-organic chemicalvapor deposition (MOCVD) has been studied using transmission electron microscopy (TEM), x-ray diffraction and Raman spectroscopy. Undoped and low Si doped samples were compared with samples of increased dopant concentration. In addition, defect reduction due to different buffer layers (AIN and GaN) is discussed. Silicon doping improves surface morphology and influences threading dislocation arrangement. High doping leads to a more random distribution of dislocations. Based on this study it appears (for the same dopant concentration) that an AIN buffer layer can significantly reduce the number of threading dislocations, leaving the samples more strained. However, no significant reduction of threading dislocations could be observed in the samples with GaN buffer layer. These samples are the least strained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 487
Copyright
Copyright © Materials Research Society 1996

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