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Effect of Phosphorus Doping on the Young’s Modulus and Stress of Polysilicon Thin Films

Published online by Cambridge University Press:  20 January 2011

Elena Bassiachvili  and
Patricia Nieva
Elena Bassiachvili
Affiliation:
University of Waterloo, Waterloo, Ontario, Canada.
Patricia Nieva
Affiliation:
University of Waterloo, Waterloo, Ontario, Canada.
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Abstract

On-chip MEMS (Micro Electromechanical Systems) characterization devices have been used to extract the Young’s modulus and average stress of polysilicon doped with phosphorus using thermal diffusion from a spin-on-dopant source. A customized fabrication process was developed and the devices were fabricated and tested. Resonant and static deformation tests were performed using microbridges. Information gathered from these experiments was combined to extract the Young’s modulus and residual stress of the thin film. Several doping concentrations, from undoped to 2.99×1020 phosphorus atoms/cm3 (4.148×10-4 Ω/cm), have been studied and it has been concluded that the Young’s modulus of phosphorus doped polysilicon with a chemical phosphorus concentration of 1.96×1020 atoms/cm3 (4.572×10-4 Ω/cm) increases by approximately 50GPa and the average stress of polysilicon with a phosphorus concentration of 2.99×1020 atoms/cm3 (4.148×10-4 Ω/cm) becomes more tensile by approximately 63 MPa relative to undoped specimens.

Keywords

diffusiondopantSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1299: Symposium S – Microelectromechanical Systems—Materials and Devices IV , 2011 , mrsf10-1299-s09-09
Copyright
Copyright © Materials Research Society 2011

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References

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