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The Effect of Interfacial Chemistry on Metal Ion Penetration into Polymeric Films

Published online by Cambridge University Press:  11 February 2011

Anupama Mallikarjunan ,
Jasbir Juneja ,
Guangrong Yang ,
Shyam P. Murarka  and
Toh-Ming Lu
Anupama Mallikarjunan
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180, USA
Jasbir Juneja
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180, USA
Guangrong Yang
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180, USA
Shyam P. Murarka
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180, USA
Toh-Ming Lu
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180, USA
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Abstract

In order to boost the performance of next-generation silicon integrated circuits, polymers with lower dielectric constant compared to silicon dioxide are required as interlayer dielectrics (ILDs). Ion penetration from surrounding interconnect metal (typically copper or aluminum) or from barrier materials (e.g., tantalum or tantalum nitride) under thermal and electrical stresses can lead to premature failure of the polymers. Hence, ion penetration was studied in hybrid organosiloxane polymer (HOSP) using bias-temperature stressing. Metal/polymer interface chemistry, particularly the presence of interfacial oxygen, was found to play a key role in aiding metal ionization, and subsequent mobile ion penetration into dielectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 734: Symposia A/B – Defect-Mediated Phenomena in Ordered Polymers – Polymer/Metal Interfaces and Defect Mediated Phenomena in Ordered Polymers , 2002 , B9.60
Copyright
Copyright © Materials Research Society 2003

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References

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